Toyoda Gosei Co., Ltd.

Ryohei Inazawa

Toshiya Uemura

Masanobu Ando

Tomoharu Shiraki

Koichi Goshonoo

Shigemi Horiuchi

Naoki Arazoe

Yuhei Ikemoto

Koichi Mizutani

Yoshinori Kinoshita

Masahiro Ohashi

Toshiya Umemura

Tomoyuki Tainaka

The light-emitting device has a semiconductor layer including a p-layer, a light-emitting layer, and an n-layer, which are formed of a Group III nitride semiconductor, and an n-electrode on the n-layer. The device also has a device isolation trench which runs along the outer periphery of the semiconductor layer and which provides the semiconductor layer with a mesa shape; and an insulation film continuously provided on first to third regions, the first region being an outer peripheral region of the n-layer, the second region being the side surface of the trench, and the third region being the bottom surface of the device isolation trench. The n-electrode consists of two pad portions and a wire trace portion. The outer peripheral wire trace portion is formed as a frame completely contouring the periphery of the device.

Group III nitride semiconductor light-emitting device

A method for producing a Group III nitride compound semiconductor element includes growing an epitaxial layer containing a Group III nitride compound semiconductor using a different kind of substrate as an epitaxial growth substrate, adhering a supporting substrate to the top surface of the epitaxial growth layer through a conductive layer, and then removing the epitaxial growth substrate by laser lift-off. Before adhesion of the epitaxial layer and the supporting substrate, a first groove that at least reaches an interface between the bottom surface of the epitaxial layer and the epitaxial growth substrate from the top surface of the epitaxial layer formed on the epitaxial growth substrate and acts as an air vent communicating with the outside of a wafer when the epitaxial layer and the supporting substrate are joined to each other. Next, the epitaxial layer is divided into each chip by separating the epitaxial growth substrate by laser lift-off, and then removing the epitaxial layer serving as the outer periphery of each chip. Next, the outer peripheral side surface of the epitaxial layer of each chip is at least completely covered with an insulating protective film. Next, the supporting substrate is separated into each chip.

Method for producing group III nitride compound semiconductor element

Provided is a method for producing a Group III nitride-based compound semiconductor light-emitting device, wherein a contact electrode is formed on an N-polar surface of an n-type layer through annealing at 350&#xb0; C. or lower. In the case where, in a Group III nitride-based compound semiconductor device produced by the laser lift-off process, a contact electrode is formed, through annealing at 350&#xb0; C. or lower, on a micro embossment surface (i.e., a processed N-polar surface) of an n-type layer from vanadium, chromium, tungsten, nickel, platinum, niobium, or iron, when a pseudo-silicon-heavily-doped layer is formed on the micro embossment surface (i.e., N-polar surface) of the n-type layer through treatment with a plasma of a silicon-containing compound gas, and treatment with a fluoride-ion-containing chemical is not carried out, ohmic contact is obtained, and low resistance is attained.

Method for producing group III nitride-based compound semiconductor device

The method of the invention for producing a group III-V semiconductor device includes forming, on a base, a plurality of semiconductor devices isolated from one another, each semiconductor device having at least an n-layer proximal to the base, and a p-layer distal to the base, and having a p-electrode formed on the top surface of the p-layer, and a first low-melting-point metal diffusion preventing layer, the low-melting-point metal diffusion preventing layer being formed on the top surface of the p-electrode; forming, from a dielectric material, a side-surface protective film so as to cover a side surface of each semiconductor device; bonding the semiconductor device to a conductive support substrate via a low-melting-point metal layer; and removing the base through the laser lift-off process.

Group III-V semiconductor device and method for producing the same

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Aichi-ken, Japan

Ryohei Inazawa