Sanken Electric Co., Ltd.

Kyocera Document Solutions Inc.

Ryohei Baba

Tomonori Hotate

Hiroshi Shikauchi

Yuki Tanaka

Hiromichi Kumakura

Hiroko Kawaguchi

Satoru Washiya

Toru Yoshie

Shinichi Iwakami

Youhei Ohno

Provided is a highly reliable semiconductor device that uses a thick passivation layer. The protective film is formed so as to cover mostly the entire surface of a semiconductor substrate, and is open only in an area of part that is above a metal wiring layer (connection area). The passivation layer includes starting from the bottom side, a first silicon nitride film that includes silicon nitride (SiN), a silicon oxide film that includes silicon oxide (SiO), and an organic film (organic layer) that includes a polyimide. The silicon oxide film and organic film are formed so as to cover the electrode layer (metal wiring layer) except the top of the insulation layer and the connection area, however, the first silicon nitride film is formed only on the insulation layer and not formed on the electrode layer.

Semiconductor device

A semiconductor device includes a semiconductor substrate, which includes: a drift region that has a first conductivity type; a body region that has a second conductivity type and is formed on the drift region; and an impurity region that has the first conductivity type and is formed inward from a surface of the body region. The semiconductor device further includes a trench, which is formed on a front surface of the semiconductor substrate and reaches the drift region; a control electrode, which is formed in the trench; an oxide film, which is formed between an inner wall of the trench and the control electrode; an electrode, which is connected to the impurity region; and a transistor, which includes a nitride film formed on the front surface of the semiconductor substrate excluding an upper side of the control electrode and a formation position of the electrode, in the semiconductor substrate.

Semiconductor device with a gate insulating film formed on an inner wall of a trench, and method of manufacturing the same

A semiconductor device includes a semiconductor base body having a first main surface and a second main surface, the first main surface and the second main surface being opposite with each other; a Schottky electrode that is disposed on the first main surface and forms a Schottky junction with the semiconductor base body; and a barrier metal layer that is brought into ohmic contact with the first main surface around the Schottky electrode and covers a side surface of the Schottky electrode.

A semiconductor device of trench gate type is provided that has achieved both large on-current and high off-state breakdown voltage. Around trench T and between it and electric field relaxation p-layer, low resistance n-layeris provided. Low resistance n-layeris formed deeper than trench T, and shallower than electric field relaxation p-layer, being connected to n-layer (drift layer)just thereunder, and thus low resistance n-layerand n-layerare integrated to form a drift layer. Although low resistance n-layeris n-type as is n-layer, donor concentration thereof is set higher than that of n-layer, thereby low resistance n-layerhaving a resistivity lower than that of n-layer. This low resistance n-layeris provided in on-current path (between electric field relaxation p-layerand trench T), whereby low resistance n-layercan lower the resistance to on-current.

A semiconductor device includes: a nitride group semiconductor functional layer including a second nitride group semiconductor region on a first nitride group semiconductor region where a two-dimensional carrier gas layer is made, the second nitride group semiconductor region functioning as a barrier layer; a first main electrode electrically connected to one end of the two-dimensional carrier gas layer; a second main electrode electrically connected to the other end of the two-dimensional carrier gas layer; and a metal oxide film placed between the first and second main electrodes, electrically connected to the first main electrode, the first main electrode extends over an upper surface of the metal oxide film.

Growing community of inventors

Niiza, Japan

Ryohei Baba