Nuflare Technology, Inc.

Ryoh Kawana

Yasuo Kato

Hiroshi Matsumoto

Hideo Inoue

Hayato Kimura

Kei Hasegawa

Masafumi Ise

A multi-charged particle beam writing apparatus includes a circuit to allocate an additional dose to a position inside a writing target pattern in order to change a first dose distribution by an excessive dose, generated on the target object by applying, in the multi-charged particle beams, an excessive dose defective beam, to a second dose distribution whose center is located inside the writing target pattern and for which beam irradiation canceling out the excessive dose and being in a range of the first dose distribution exists; and a circuit to perform correction by subtracting an increased dose amount, generated at the center of the second dose distribution because of the additional dose being allocated, from a dose with which one of the center of the second dose distribution and a vicinity of the center of the second dose distribution is irradiated.

Multi-charged particle beam writing apparatus and multi-charged particle beam writing method

A multiple charged particle beam writing apparatus includes a margined block region generation circuit to generate plural margined block regions each formed by adding a margin region to the periphery of each block region of plural block regions obtained by dividing the writing region of the target object, a detection circuit to detect a defective beam in multiple charged particle beams, a specifying circuit to specify, for each defective beam detected, a position irradiated with the defective beam, and an affiliation determination circuit to determine a margined block region, in the plural margined block regions, to which the position irradiated with the defective beam belongs, based on conditions set according to a sub-block region, in plural sub-block regions acquired by dividing the margined block region, in which the position irradiated with the defective beam in the multiple charged particle beams is located.

Multiple charged particle beam writing apparatus and multiple charged particle beam writing method

In one embodiment, a multi charged particle beam writing apparatus includes a blanking plate including a plurality of blankers, bitmap generation processing circuitry generating bitmap data for each writing pass of multi-pass writing, the bitmap data specifying irradiation time periods for a plurality of irradiation positions, a plurality of dose correction units configured to receive bitmap subdata items obtained by dividing the bitmap data from the bitmap generation processing circuitry, and correct the irradiation time periods to generate a plurality of dose data items corresponding to respective processing ranges, and data transfer processing circuitry transferring the plurality of dose data items to the blanking plate through a plurality of signal line groups. Each of the signal line groups corresponds to the blankers located in a predetermined region of the blanking plate. The data transfer processing circuitry changes the signal line groups, used to transfer the plurality of dose data items generated by the respective dose correction units, for each writing pass.

Multi charged particle beam writing apparatus and multi charged particle beam writing method

According to one aspect of the present invention, a multiple charged particle beam lithography apparatus includes dose operation processing circuitry configured to, in a case that a pattern is written into a pattern writing region sufficiently larger than the setting region in a target object by using the multiple charged particle beams following the pattern writing sequence, operate an incident dose of a beam to each position intended inside the pattern writing region by continuously using repeatedly data of dose modulation value groups defined for a plurality of pixel regions of a same block among a plurality of blocks obtained by dividing a dose modulation map for each preset number of pixel regions without switching to data of dose modulation value groups of other blocks.

Multiple charged particle beam lithography apparatus and multiple charged particle beam pattern writing method

A multi charged particle beam writing apparatus includes a modulation rate data calculation processing circuitry to calculate, for each pixel being a unit region, a modulation rate of a beam to a pixel concerned and each modulation rate of a beam to at least one pixel at a periphery of the pixel concerned, and a corrected-dose calculation processing circuitry to calculate, for the each pixel, a corrected dose by adding a multiplied value obtained by multiplying the modulation rate of the pixel concerned in a modulation rate map by beam dose to the pixel concerned, and a multiplied value obtained by multiplying the modulation rate of the pixel concerned which becomes one of the at least one pixel at the periphery with respect to another pixel defined for the position of the pixel concerned by a beam dose to the another pixel.

Multi charged particle beam writing apparatus, and multi charged particle beam writing method

A charged particle beam writing apparatus includes a processing circuitry configured to calculate a third proximity effect correction irradiation coefficient where at least one correction irradiation coefficient term up to k-th order term, in correction irradiation coefficient terms of from a first order term to a n-th order term for a first proximity effect correction irradiation coefficient which does not take account of a predetermined effect, are replaced by at least one correction irradiation coefficient term up to the k-th order term, for a second proximity effect correction irradiation coefficient which takes account of the predetermined effect; and a processing circuitry configured to calculate a dose by using the third proximity effect correction irradiation coefficient.

Charged particle beam writing apparatus and charged particle beam writing method

In one embodiment, a multi charged particle beam writing apparatus includes processing circuitry that is programmed to perform the function of a data region determination part determining a data region based on boundaries of pixels obtained by dividing a writing area of a substrate into mesh-shaped regions, an irradiation range of multiple charged particle beams, and boundaries of stripe segments obtained by dividing the writing area into segments having a predetermined width such that the segments are arranged in a predetermined direction, a deflection coordinate adjustment part adjusting deflection coordinates of the multiple charged particle beams such that the boundaries of the pixels are mapped to a boundary of the irradiation range, and a correction part calculating a corrected dose of each beam of the multiple charged particle beams by distributing, based on a positional relationship between the beam and pixels in the data region, a dose of the beam corresponding to a pixel in the data region calculated based on write data to one or more beams, and adding doses distributed to the beam, and a writing mechanism, including a charged particle beam source, a deflector, and a stage on which a target object is placed, and the writing mechanism deflecting the multiple charged particle beams based on the adjusted deflection coordinates and applying the beams each having the corrected dose to write a pattern.

A multiple charged particle beam lithography apparatus includes a weighting coefficient operation unit to operate a plurality of weighting coefficients that assign weights to doses of a plurality of different beams used for multiple pattern writing for each pixel of pixels, the each pixel being used as an irradiation unit region per beam of multiple charged particle beams; a dose operation processing circuitry to operate doses of the plurality of different beams weighted by using a corresponding weighting coefficient among the plurality of weighting coefficients for each of the pixels; and a writing mechanism that writes a pattern on a target object using the multiple charged particle beams such that corresponding pixels are irradiated with the plurality of different beams of the doses weighted respectively.

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Yokohama, Japan

Ryoh Kawana