Toyota Jidosha Kabushiki Kaisha

Ryo Tsurumoto

Hiromichi Nakata

Takayasu Sato

Yoji Sato

Kazutaka Tachibana

Osamu Ariyada

Yuji Takano

A plasma chemical vapor deposition device includes a chamber, a first conductor having an elongated shape, a second conductor having a tubular shape, a high-frequency output device, and a direct-current power supply. A first connecting portion of the first conductor with the high-frequency output device and a second connecting portion of the first conductor with the direct-current power supply are both placed outside the chamber. A distance from one end of the first conductor to the first connecting portion is shorter than a distance from the one end of the first conductor to the second connecting portion. An impedance change portion is provided between the first connecting portion and the second connecting portion in the first conductor, the impedance change portion having an impedance different from an impedance between the one end of the first conductor and the first connecting portion.

Growing community of inventors

Tokyo, Japan

Ryo Tsurumoto