Mitsubishi Electric Corporation

Ryo Tsuda

Yukimasa Hayashida

Ryutaro Date

Shigeru Hasegawa

Daisuke Oya

Yasuhiro Sakai

Kenji Hatori

Hitoshi Uemura

Shinichi Iura

Kazuhiro Morishita

Junichi Nakashima

Yasushi Nakayama

Yoshiko Tamada

Shota Morisaki

Tetsu Negishi

Goro Yasutomi

Isao Umezaki

An insulated substrate () includes first and second circuit patterns (). A semiconductor device () includes first and second main electrodes () connected to the first and second circuit patterns () respectively and through which main currents flow. A first lead () is solder jointed to the first circuit pattern (). A second lead () is ultrasonic jointed to the second circuit pattern ().

Power semiconductor module, power conversion apparatus, and moving body

An object is to provide a technique capable of enhancing electrical characteristics and reliability of a semiconductor device. The semiconductor device includes a plurality of semiconductor chips, a plurality of electrodes each being electrically connected to each of the plurality of semiconductor chips, a sealing member, and a joint part. The sealing member covers the plurality of semiconductor chips, and parts being connected to the plurality of semiconductor chips, of the plurality of electrodes. The joint part is disposed outside the sealing member to electrically connect parts which are not covered by the sealing member, of the plurality of electrodes.

Semiconductor device

Gates of a plurality of semiconductor switching elements are electrically connected to a common gate control pattern by gate wires. Sources of the plurality of semiconductor switching elements are electrically connected to a common source control pattern by source wires. The gate control pattern is disposed to interpose the source control pattern between the gate control pattern and each of the plurality of semiconductor switching elements that are connected in parallel and that operate in parallel. Hence, each of the gate wires becomes longer than each of the source wires, and has an inductance larger than the source wire. Accordingly, gate oscillation is reduced or suppressed in the plurality of semiconductor switching elements that are connected in parallel and that operate in parallel.

Semiconductor module and power conversion device

First and second circuit patterns () are provided on an insulating substrate (). First and second semiconductor chips () are provided on the first circuit pattern (). A relay circuit pattern () is provided between the first semiconductor chip () and the second semiconductor chip () on the insulating substrate (). A wire () is continuously connected to the first semiconductor chip (), the relay circuit pattern (), the second semiconductor chip () and the second circuit pattern () which are sequentially arranged in one direction.

It is an object of the present invention to provide a semiconductor device which allows an increase in the number of semiconductor elements mounted in parallel and prevents a shape of an insulating substrate onto which the semiconductor elements are mounted, from being laterally long, and provide a semiconductor module including such semiconductor device. A semiconductor device according to the present invention includes an insulating substrate, a metal pattern which is a continuous piece and is bonded to one main surface of the insulating substrate, and a plurality of switching elements which are bonded to a surface opposite to the insulating substrate on the metal pattern, and the plurality of switching elements are arranged in a matrix of two or more rows and two or more columns on the metal pattern.

Semiconductor device and semiconductor module provided with same

A base plate, and a plurality of unit structures formed on the base plate are provided. Each of the unit structures including an insulating substrate fixed on the base plate, a metal pattern formed on the insulating substrate, a semiconductor element electrically connected to the metal pattern, and a main electrode having an upper end portion exposed to the outside and a lower end portion connected to a peripheral portion of the metal pattern closest to an outer edge of the base plate.

Power semiconductor device

Each of semiconductor module includes a semiconductor chip, a case surrounding the semiconductor chip, and a main electrode connected to the semiconductor chip and led out to an upper surface of case. A connecting electrode is connected and fixed to the main electrodes of the adjacent semiconductor modules. The connecting electrode is formed only of a metal plate.

Growing community of inventors

Tokyo, Japan

Ryo Tsuda