Tokyo Electron Limited

Ryo Terashima

Yuzuru Sakai

Akihiro Yokota

Tomo Murakami

Takaharu Saino

A disclosed plasma processing apparatus includes a chamber, a plasma generator, a plurality of annular electromagnet units, a power source, at least one optical sensor, and a controller. The plurality of annular electromagnet units are provided coaxially with respect to an axis passing through an internal space of the chamber. The at least one optical sensor detects an emission intensity distribution of plasma along a radial direction in the chamber. The controller controls a power source to adjust currents respectively supplied to the plurality annular electromagnet units according to the emission intensity distribution.

Plasma processing apparatus and plasma processing method

A plasma processing apparatus includes a plurality of plasma processing chambers, a process gas supply line that supplies a plasma processing gas to the plasma processing chambers, a first additive gas supply line that supplies an additive gas to the plasma processing chambers, an exhaust space shared by the plurality of plasma processing chambers, and a controller. The controller determines a first plasma processing chamber group and a second plasma processing chamber group. The first plasma processing chamber group includes one or more plasma processing chambers, each of which performs the plasma processing and the second plasma processing chamber group includes one or more plasma processing chambers, each of which does not perform the plasma processing. The controller causes the additive gas to be supplied to the one or more plasma processing chambers of the second plasma processing chamber group from the first additive gas supply line.

A plasma processing method of etching an organic film through a mask having an opening is provided. The mask is formed on the organic film, and is made of a silicon-containing film. The method includes rectifying a shape of the mask. The rectifying of the shape of the mask includes refining a side wall of the opening of the mask, and etching an upper surface of the mask.

Plasma processing method and plasma processing apparatus

Roughness of an end surface portion of a step shape can be decreased. An etching method includes a first etching process and a second etching process. In the first etching process, etching is performed on a processing target object, which has a silicon-containing film thereon and a photoresist formed on a surface of the silicon-containing film and which is placed in a processing vessel, to etch the silicon-containing film by using the photoresist as a mask. In the second etching process, a first processing gas containing oxygen and halogen is supplied into the processing vessel, or a third processing gas containing the oxygen is supplied into the processing vessel after a second processing gas containing the halogen is supplied into the processing vessel. The first etching process and the second etching process are repeated a multiple number of times.

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Miyagi, Japan

Ryo Terashima