Fuji Electric Co., Ltd.

Canon Kabushiki Kaisha

Mochida Pharmaceutical Co., Ltd.

Toppan Printing Co., Ltd.

Jsr Corporation

Laurel Bank Machines Company, Ltd.

Laurel Precision Co., Ltd.

Nippon Telegraph and Telephone Corporation

Mitsubishi Heavy Industries Limited

Mitsui Chemicals, Inc.

Mitsui Toatsu Chemicals, Incorporated

Jm Energy Corporation

Kabushiki Kaisha Toshiba

Ryo Tanaka

Shinya Takashima

Katsunori Ueno

Masaharu Edo

Yasuyuki Kunihiro

Ei Mochida

Yukio Hosaka

Kentaro Kimura

Hideaki Teranishi

Nobuo Ohzawa

Fujio Sakurai

Hideaki Matsuyama

Yuki Ohuchi

Satoshi Shimobaba

Seishichi Hata

Shigeharu Suzuki

Hisashi Tsuji

Takahiro Shimizu

Akio Uemura

Aki Nagai

Takuro Kameda

Tomohiro Utaka

Kosuke Kinoshita

Yukio Shimazaki

Kouji Senoo

Kiyoshi Sakai

Hisahiro Ishiwari

Michio Ichimura

Saki Matsuo

Nobuyuki Miyaki

Yuuichi Eriyama

Yasuhito Tanaka

Motoki Okaniwa

Masahiro Yamamoto

Kenji Kojima

Yasumasa Kunisada

David Allen Flodman

Satoshi Hada

Satoshi Mizukami

Miyuki Kawashima

Masahiko Ishibashi

Nobuhiro Kawashima

Chizuru Inoue

Katsuhisa Kimata

Yasuo Sajika

Yuta Fukushima

Koji Yamada

Yumio Kudoh

Hitomi Fukutake

Yusuke Akada

Daisuke Mori

Chikara Takashima

Tomohide Handa

Shinichi Inada

Naruto Okahashi

Kota Fujii

Nobuo Hamada

Hirotaka Suda

Miki Suzuki

Kang Ko Chung

Fukutake Hitomi

Yukihiro Ozaki

Hitoshi Okayama

An information processing apparatus for doing a setting of a capturing apparatus having a tracking function for tracking an object by pan/tilt/zoom (PTZ) control, comprises: an acquisition unit configured to acquire a captured image obtained by the capturing apparatus; and a display control unit configured to display, on a display unit, a graphical user interface (GUI) configured to accept a setting of a target position in the captured image of an object that is a tracking target. The display control unit changes an icon indicating the target position in the GUI between a case where the target position in a first mode that permits zoom control in tracking is set and a case where the target position in a second mode that suppresses the zoom control in tracking is set.

Information processing apparatus that changes a display state of an icon on a captured image depending on whether zoom control in tracking is permited, and control method thereof

A control apparatus includes a control unit configured to control an imaging range of an imaging unit to track a tracking target, and a setting unit configured to set a search area based on a range set by a user, a user operation for controlling the imaging range, or a past position of the tracking target, wherein the control unit controls the imaging range to search for the tracking target in the search area in a case where tracking of the tracking target has failed.

Control apparatus, method, and non-transitory storage medium for smart tracking control

An articulated robot includes a base; an end section; a plurality of links including a first link and a second link and connecting the base and the end section to each other; a first driving mechanism connecting the first link and the second link to each other and configured to rotate the second link about an axis as a first rotation axis relative to the first link, the axis as the first rotation axis forming an angle greater than a predetermined angle with a first direction in which the first link extends; a first moving mechanism configured to move the first driving mechanism relative to the first link along the first direction; and a second moving mechanism configured to move the second link relative to the first driving mechanism along a second direction in which the second link extends.

Articulated robot, method for controlling articulated robot, robot system, and method for manufacturing object

A coin processing device includes: a feed belt that normally rotates in contact with the upper side of a coin to convey the coin to a conveyance passage extending from an inlet-side passage portion to an outlet-side passage portion; a conveyance motor that normally rotates the feed belt during the normal rotation; a detection unit that detects the coin passing through a position determined in advance in the conveyance passage; and a control unit that switches the conveyance motor from a first rotation state where the conveyance motor normally rotates at a first rotation speed to a second rotation state where the conveyance motor normally rotates at a second rotation speed slower than the first rotation speed, in response to detection of the coin by the detection unit, and then rotates the conveyance motor.

Coin processing device

A liquid-repellent layer forming resin composition comprises a polypropylene resin (A) and a silylated polyolefin (B), wherein the polypropylene resin (A) comprises a random polypropylene resin (A1) and a block polypropylene resin (A2) with a mass ratio (Mass of random polypropylene resin (A1)/Mass of block polypropylene resin (A2)) in the range of 20/80 to 80/20.

Liquid repellent layer-forming resin composition, and liquid repellent film, liquid repellent laminate, packaging material, and container using same

A shroud of a vane of a turbine is provided. The shroud includes a shroud main body comprising a first wall having a gas-passage face facing a hot gas passage of the turbine and a cooling face facing opposite to the hot gas passage, a shroud edge disposed on a circumference of the shroud main body to surround the shroud main body, the shroud edge comprising a shroud edge passage therein, and an impingement box disposed to face the cooling face of the first wall so as to be spaced apart from the cooling face of the first wall. The impingement box comprises a cooling air inlet to introduce a cooling air from the shroud edge passage into an inside of the impingement box, and an impingement air hole configured to jet the introduced cooling air to the cooling face of the first wall to cool the cooling face of the first wall.

Structure of cooling turbine vane shroud and manufacturing method thereof

A method for manufacturing a nitride semiconductor device including: forming N-type regions in a nitride semiconductor layer; implanting ions of an acceptor element into a region sandwiched by the N-type regions in the nitride semiconductor layer; and forming a P-type region sandwiched by the N-type regions by subjecting the nitride semiconductor layer to heat treatment and activating the acceptor element. The forming the N-type regions includes implanting ions of a donor element to the nitride semiconductor layer such that concentration of the donor element in the N-type regions is equal to or greater than concentration of the acceptor element in the P-type region. The implanting ions of the acceptor element includes implanting ions of the acceptor element such that concentration of the acceptor element in the P-type region is 1×10cmor more and 1×10cmor less.

Method for manufacturing nitride semiconductor device and nitride semiconductor device

A method for manufacturing a nitride semiconductor device including: forming an N-type region in a nitride semiconductor layer; implanting ions of an acceptor element into a region under the N-type region in the nitride semiconductor layer; and forming a first P-type region under the N-type region by subjecting the nitride semiconductor layer to heat treatment and activating the acceptor element. The forming the N-type region includes implanting ions of a donor element into the nitride semiconductor layer such that concentration of the donor element in the N-type region is equal to or greater than concentration of the acceptor element in the first P-type region. The implanting ions of the acceptor element into a region under the N-type region includes implanting ions of the acceptor element such that concentration of the acceptor element in the first P-type region is 1×10cmor more and 1×10cmor less.

An image capturing control apparatus includes a processor and a memory storing executable instructions which, when executed by the processor, cause the image capturing apparatus to perform operations including detecting coordinates indicating each of a plurality of parts of an object from an image captured by an image capturing unit, correcting the detected coordinates to corrected coordinates for each of the plurality of parts calculated based on a preset magnification and relative position, generating a tracking coordinate based on a plurality of the corrected coordinates each indicating different parts of the object and a distance of the plurality of the corrected coordinates, the distance being within a threshold, and controlling an image capturing range of the image capturing unit based on the generated tracking coordinates.

Image capturing control apparatus, image capturing apparatus, image capturing control method, and storage medium

A liquid-repellent layer forming resin composition comprises a polyolefin resin (A), a silylated polyolefin (B), and a compatibilizer (C) having a site compatible with the polyolefin resin (A) and a site compatible with the silylated polyolefin (B), wherein a polyolefin site of the silylated polyolefin (B) is incompatible with the polyolefin resin (A).

Liquid-repellent layer forming resin composition, and liquid-repellent film, liquid- repellent laminate, packaging material, and container using same

A method for manufacturing a nitride semiconductor device includes: selectively ion-implanting an element that is other than p-type impurities and n-type impurities into a first region in a first primary surface of a gallium nitride layer so as to generate crystal defects in the first region; selectively ion-implanting a p-type impurity into a second region in the gallium nitride layer, the second region being shallower than the first region in a depth direction and being within the first region in a plan view; and thermally treating said gallium nitride layer that has been ion-implanted with said element and said p-type impurity so as to thermally diffuse said p-type impurity in the second region into a third region that is within the first region and that surrounds a bottom and sides of the second region.

Nitride semiconductor device

A nitride semiconductor device is provided, comprising: a first nitride semiconductor layer of a first conductivity-type; a second nitride semiconductor layer of a second conductivity-type provided above the first nitride semiconductor layer; a junction region of a first conductivity-type which is provided to extend in a direction from a front surface of the second nitride semiconductor layer to the first nitride semiconductor layer and has a doping concentration Nequal to or higher than that of the first nitride semiconductor layer; and a source region of a first conductivity-type which is provided more shallowly than the junction region and has a doping concentration equal to or higher than the doping concentration N, wherein a dopant of the source region is an element with an atomic weight larger than that of a dopant in the junction region.

Nitride semiconductor device and method for fabricating nitride semiconductor device

An imaging control apparatus detects a gesture of a person in an image and motion information of the gesture. The imaging control apparatus firstly determines whether the detected gesture is a gesture requiring an angle-of-view change. In a case where the detected gesture is the gesture requiring an angle-of-view change, the imaging control apparatus secondly determines whether a time elapsed since the last time a gesture requiring an angle-of-view change is made is within a predetermined time. The imaging control apparatus generates a pan operation command to change an angle of view based on the second determination result.

Imaging control apparatus, imaging control method, and storage medium

A control apparatus includes a detection unit configured to detect an object from an image captured by an imaging apparatus, a control unit configured to control a drive unit in such a manner that an imaging direction of the imaging apparatus is changed following a movement of the object detected by the detection unit, and a determination unit configured to determine information about the movement of the object detected by the detection unit. The control unit controls drive frequency of the drive unit based on the information about the movement determined by the determination unit.

Control apparatus, control method, and recording medium

A gallium nitride based semiconductor device is provided, where when a thickness of a transition layer is defined as the followings, the thickness of the transition layer is less than 1.5 nm: (i) a distance between a depth position at which an atomic composition of nitrogen element constituting the gallium nitride based semiconductor layer is &#xbd; relative to that at a position on the GaN based semiconductor layer side sufficiently away from the transition layer, and a depth position at which an atomic composition of a metal element is &#xbd; of a value of a maximum if an atomic composition of the metal element constituting an insulating layer has the maximum, or a depth position at which an atomic composition of the metal element is &#xbd; relative to that at a position on the insulating layer side sufficiently away from the transition layer if not having the maximum.

Gallium nitride based semiconductor device and manufacturing method of gallium nitride based semiconductor device

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Tokyo, Japan

Ryo Tanaka