Fujitsu Corporation

Ryo Suzuki

Shigekazu Okumura

Shuichi Tomabechi

Hironori Nishino

Junichi Kon

Hiroyasu Yamashita

Koji Tsunoda

An infrared detector includes: a laminate of semiconductor in which a first electrode layer, a light receiving layer, and a second electrode layer are laminated in this order; a first insulating film configured to be in contact with the laminate and covers a surface of the laminate; and a second insulating film configured to be in contact with and covers a surface of the first insulating film opposite to an interface between the first insulating film and the laminate, wherein the first insulating film is configured to have a lower Gibbs free energy than an oxide of a material from which the laminate is formed, and in the second insulating film, diffusion of impurity is larger than in the first insulating film.

Infrared detector, imaging device including the same, and manufacturing method for infrared detector

A semiconductor crystal substrate includes a crystal substrate that is formed of a material including GaSb or InAs, a first buffer layer that is formed on the crystal substrate and formed of a material including GaSb, the first buffer layer having n-type conductivity, and a second buffer layer that is formed on the first buffer layer and formed of a material including GaSb, the second buffer layer having p-type conductivity.

Semiconductor crystal substrate, infrared detector, and method for producing semiconductor crystal substrate

A semiconductor crystal substrate includes a crystal substrate that is formed of a material including one of GaSb and InAs, a first buffer layer that is formed on the crystal substrate and formed of a material including GaSb, and a second buffer layer that is formed on the first buffer layer and formed of a material including GaSb. The first buffer layer has a p-type conductivity, and the second buffer layer has an n-type conductivity.

Semiconductor crystal substrate, infrared detector, method for producing semiconductor crystal substrate, and method for producing infrared detector

An infrared detector includes, a substrate, a lower contact layer formed on the substrate, a first light receiving layer that is formed on the lower contact layer and has a quantum well structure, an intermediate contact layer formed on the first light receiving layer, a second light receiving layer that is formed on the intermediate contact layer and has a quantum well structure, and an upper contact layer formed on the second light receiving layer. Each of the first light receiving layer and the second light receiving layer includes, a first semiconductor layer that is doped with a first conductivity-type impurity, and a second semiconductor layer that is formed on the first semiconductor layer, and is doped with a second conductivity-type impurity which compensates the first conductivity-type impurity.

Infrared detector, imaging device, imaging system, and method of manufacturing infrared detector

An infrared detector includes a quantum dot structure, and an electrode that is coupled to the quantum dot structure, wherein the quantum dot structure is obtained by stacking a plurality of structures each including a quantum dot, a first barrier layer under the quantum dot and a second barrier layer over the quantum dot to cover the quantum dots, and an intermediate layer under the first barrier layer, and wherein the first barrier layer includes a first region and a second region having a lower Al concentration than that of the intermediate layer between the first region and the intermediate layer.

Infrared detector, imaging device, and imaging system

A photodetector includes a lower contact layer, a first absorber layer that is formed over the lower contact layer and that is photosensitive to light of a first wavelength, an middle contact layer formed over the first absorber layer, a second absorber layer that is formed over the middle contact layer and that is photosensitive to light of a second wavelength, and an upper contact layer formed over the second absorber layer, wherein a barrier layer is formed between the lower contact layer and the first absorber layer, between the first absorber layer and the middle contact layer, between the middle contact layer and the second absorber layer, or between the second absorber layer and the upper contact layer.

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Fujisawa, Japan

Ryo Suzuki