Jx Nippon Mining Metals Corporation

Nippon Mining & Metals Co., Ltd.

Ono Pharmaceutical Co., Ltd.

Koki Holdings Co., Ltd.

Panasonic Intellectual Property Management Co., Ltd.

Nikko Materials Company, Limited

Ryo Suzuki

Shuichi Irumata

Hiroshi Takamura

Yasuhiro Yamakoshi

Takeo Okabe

Kunihiro Oda

Hirohito Miyashita

Ken Miyazawa

Takashi Kondo

Gareth Neil Brace

Shingo Nakatani

Sho Kouyama

Stuart Flanagan

Akira Imagawa

Steve Courtney

Chris Yarnold

Osamu Ichihara

Kotaro Yanagi

Elise Gadouleau

John Barker

Anthony Richardson

Hiroshi Ohta

Kenji Sato

Hiroaki Shimizu

Dai Nozawa

Masahito Abe

Hiroki Inoue

Atsushi Hiramatsu

Kazuyuki Satoh

Shoki Okura

Hiroyoshi Yamamoto

Yuko Araki

Satoshi Sobagaki

Aya Futamura

Yosuke Endo

Takashi Fukutani

Motoaki Tateyama

Hideyuki Sasahara

Misaki Kondo

Barker John

A work tool includes: a motor; a housing including a gripping part; an electronic switch; a controller controlling the motor based on a signal from the switch; an operating part provided at the gripping part; and an intervening part movably intervened between the operating part and the switch. The switch is provided at the housing at a first position in an axial direction of the gripping part, and is switchable between an ON position for driving the motor and an OFF position for stopping the motor. A direction connecting the ON position and the OFF position to each other is a crossing direction crossing the axial direction. The operating part is movable in the crossing direction to drive and stop the motor. The intervening part transmits movement to the switch by a moving amount smaller than movement in the crossing direction of the operating part passing through the first position.

Work tool

An electric tool is provided which enables preventing adherence to a rotor core of dust, such as iron powder, that has entered a motor. The electric tool includes a cylindrical motor housingaccommodating and supporting the motor, and a cooling fan attached to a rotation shaft of the motor, and cools the motor by flowing air generated by the cooling fan toward the back or front of the motor housing, wherein a fan guideguiding cooling air is provided in front of an insulatorof a statorof the motor. The fan guideincludes a first cylindrical partwhich covers a rotation space of the cooling fan, a guide surface, and a second cylinderwhich extends backward from the guide surface, wherein a labyrinth spaceis formed by the insulatorand the second cylinder. By providing the labyrinth space, it is possible to block the flow of cooling air from the outer peripheral side of the statorto an opening

Electric tool

Provided is an electrically powered tool having an improved sensor substrate mounting structure, the electrically powered tool being configured so that a brushless type motor is axially contained in a cylindrical housing. The electrically powered tool has: a cylindrical housing for axially containing a motor; a control unit for controlling the motor; and a sensor substrate having mounted thereon a plurality of position detecting elements for detecting the rotational position of a rotor. The sensor substrate is gripped between the insulator of the motor and the housing and held on the housing side when axially mounting the motor. The sensor substrate is annularly shaped and has formed at the center thereof a through-hole through which a bearing for the motor is passed. The portion of the sensor substrate, on which a Hall IC is mounted, is provided with a synthetic resin cover member for protecting the Hall IC against dust.

Electrically powered tool

A hair cutting device includes a grip, a head disposed external to one end of the grip, the head including a cutting unit that works on hair, and a joint connecting the grip and the head. The joint includes a base connected to one of the grip and the head, and a slide portion connected to the other of the grip and head and held to be slidable within a predetermined area on a slide plane that is a plane intersecting an alignment of the grip and the head. Accordingly, the hair cutting device including the head that has an excellent ability to lessen impact which is made when the head hits the skin and to follow the skin surface is provided.

Hair cutting device

(1) The present invention provides a method for manufacturing a sputtering target in which the controllability of crystal orientation is improved. Specifically, the present invention provides a method for manufacturing a sputtering target, comprising a step of shaping at least one raw material powder selected from a metal and a metal oxide into a desired target shape using an additive manufacturing method. (2) The present invention provides a method for manufacturing a sputtering target capable of improving production efficiency. Specifically, the present invention provides a method for manufacturing a sputtering target in which a backing plate and a sputter part are bonded, comprising a shaping step of shaping at least one raw material powder selected from a metal and a metal oxide into a desired sputter part shape on a backing plate or on an intermediate material provided on a backing plate using an additive manufacturing method.

Method for manufacturing sputtering target

The present invention provides compounds of the general formula (I), their salts and N-oxides, and solvates and prodrugs thereof (wherein the characters are as defined in the description). The compounds of the general formula (I) are inhibitors of Factor XIa, so that they are useful in the prevention of and/or therapy for thromboembolic diseases. 

Pyrimidinone and its derivatives inhibiting factor XIa

An electric shaver according to the present disclosure includes: a body block having a holding portion; a head portion having a blade portion and supported on the body block to be swingable about a shaft portion; and a connecting member provided for connecting the body block and the head portion to each other. The connecting member is connected to the body block such that the connecting member is movable relative to the body block in an intersecting direction which intersects with an extending direction of the shaft portion, and the connecting member is also connected to the head portion by way of the shaft portion. The connecting member is connected to the body block by way of a resilient member. With such a configuration, it is possible to provide an electric shaver capable of suppressing the generation of abnormal sounds and vibrations while suppressing lowering of a swing performance.

Electric shaver

Provided is a backing plate obtaining by bonding an anticorrosive metal and Mo or a Mo alloy, wherein the backing plate comprises, on a surface of the Mo or Mo alloy backing plate to be cooled (cooling surface side), a layer having a thickness corresponding to 1/40 to &#x215b; of a total thickness of the backing plate and formed from an anticorrosive metal obtained by bonding one or more types of metals selected from among Cu, Al and Ti, or an alloy thereof. Additionally provided is a sputtering target-backing plate assembly obtained by bonding the foregoing Mo or Mo alloy backing plate and a target formed from a low thermal expansion material. Particularly in semiconductor applications, reductions in size have progressed and control of particles during sputtering has become stricter. The present invention aims to resolve the problem of warpage of sputtering targets formed from low thermal expansion materials and problems occurring with respect to the anticorrosive properties of Mo or Mo alloy backing plates.

Backing plate obtained by diffusion-bonding anticorrosive metal and Mo or Mo alloy, and sputtering target-backing plate assembly provided with said backing plate

According to the present invention, differently from well-known production methods, with the use of a different starting material, Ullmann condensation which may decrease the yield with an increase of a production scale can be avoided and thus 6-amino-9-[(3R)-1-(2-butynoyl)-3-pyrrolidinyl]-7-(4-phenoxyphenyl)-7,9-dihydro-8H-purin-8-one can be provided safely and stably with high reaction yield.

Process for producing purinone derivative

Provided is a polycrystalline silicon target produced by a melting method. In the polycrystalline silicon sputtering target, the average amount of nitride or carbide grains having a size of 100 &#x3bc;m or more for samples of 100&#xd7;100 mm taken from an arbitrary plane of the target is less than three. Also provided is a method of producing a polycrystalline silicon sputtering target. The method is characterized in that a silicon ingot is produced by melting silicon as a raw material with an electron beam and pouring the molten silicon into a crucible heated at 90&#xb0; C. or more, and the resulting ingot is machined into a target. The present invention has focused on polycrystalline silicon produced by a melting method, and an object of the present invention is to provide a polycrystalline silicon sputtering target having high quality by reducing the presence of silicon nitride and silicon carbide and to provide a polycrystalline silicon sputtering target having a high bending strength by devising the production process.

Polycrystalline silicon sputtering target

Pyridinone and pyrimidinone derivatives as factor Xia

A polycrystalline silicon wafer produced based on a melting method and having an outer diameter of 450 mm or more, wherein a depth of scratches on the polycrystalline silicon wafer is 10 &#x3bc;m or less. A polycrystalline silicon wafer produced based on a melting method and having an outer diameter of 450 mm or more, wherein a maximum number of scratches having a width of 40 &#x3bc;m or more and 100 &#x3bc;m or less and a depth of more than 10 &#x3bc;m and 40 &#x3bc;m or less formed on the polycrystalline silicon wafer is one or less per section when the overall polycrystalline silicon wafer is divided into 100 mm-square sections, and a depth of remaining scratches is 10 &#x3bc;m or less. Provided is a large polycrystalline silicon wafer, particularly a silicon wafer having a wafer size in which the outer diameter is 450 mm or more, in which a small number of scratches are generated on the wafer surface and which has mechanical properties similar to those of a monocrystalline silicon wafer.

Polycrystalline silicon wafer

Provided is a polycrystalline silicon wafer produced by a melting and unidirectional solidification method, where the polycrystalline silicon wafer has a diameter of 450 mm or more, a thickness of 900 &#x3bc;m or more, and an average crystal grain size of 5 to 50 mm, and is made up of one piece. The present invention provides a large-sized polycrystalline silicon wafer having a wafer size of 450 mm or more, of which: mechanical properties are similar to those of monocrystalline silicon wafers; the crystal size is large; the surface roughness is low; the surface has a high cleanliness; the polished surface has less unevenness by having a definite crystal orientation; and the sag value is similar to that of monocrystalline silicon wafers.

A hybrid silicon wafer which is a silicon wafer having a structure wherein monocrystalline silicon is embedded in polycrystalline silicon that is prepared by the unidirectional solidification/melting method. The longitudinal plane of crystal grains of the polycrystalline portion prepared by the unidirectional solidification/melting method is used as the wafer plane, and the monocrystalline silicon is embedded so that the longitudinal direction of the crystal grains of the polycrystalline portion forms an angle of 120&#xb0; to 150&#xb0; relative to the cleaved surface of the monocrystalline silicon. Thus provided is a hybrid silicon wafer comprising the functions of both a polycrystalline silicon wafer and a monocrystalline wafer.

Hybrid silicon wafer

Provided is a hybrid silicon wafer in which molten state polycrystalline silicon and solid state single-crystal silicon are mutually integrated, comprising fine crystals having an average crystal grain size of 8 mm or less at a polycrystalline portion within 10 mm from a boundary with a single-crystal portion. Additionally provided is a method of manufacturing a hybrid silicon wafer, wherein a columnar single-crystal silicon ingot is sent in a mold in advance, molten silicon is cast around and integrated with the single-crystal ingot to prepare an ingot complex of single-crystal silicon and polycrystalline silicon, and a wafer shape is cut out therefrom. The provided hybrid silicon wafer comprises the functions of both a polycrystalline silicon wafer and a single-crystal wafer.

Hybrid silicon wafer and method of producing the same

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Ibaraki, Japan

Ryo Suzuki