Hoya Corporation

Ryo Ohkubo

Osamu Nozawa

Hiroaki Shishido

Toshiyuki Suzuki

Yasushi Okubo

Kazuya Sakai

Hideaki Mitsui

Hitoshi Maeda

Takenori Kajiwara

Takashi Uchida

Yuuki Shiota

Yasutaka Horigome

Tsutomu Shoki

Masahiro Hashimoto

Takeru Kinoshita

Takamitsu Kawahara

Yuki Shiota

Akinori Kurikawa

Kazunori Ono

Kazutake Taniguchi

Tsutomo Shoki

A mask blankhas a structure in which a pattern-forming thin filmand a hard mask filmare formed on a transparent substratein this order. An Si2p narrow spectrum obtained by analyzing the hard mask film by X-ray photoelectron spectroscopy has a maximum peak at a binding energy of at least 103 eV. An N1s narrow spectrum obtained by analyzing the hard mask film by X-ray photoelectron spectroscopy has a maximum peak below a detection lower limit value. In the hard mask filma content ratio (atomic %) of silicon and oxygen is Si:O=1:less than 2.

Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device

A light shielding film made up of a material containing one or more elements selected from silicon and tantalum and a hard mask film made up of a material containing chromium, oxygen, and carbon are laminated on a transparent substrate. The hard mask film is a single layer film having a composition gradient portion with increased oxygen content on the surface and on the neighboring region. The maximum peak for N1s in a narrow spectrum obtained via X-ray photoelectron spectroscopy analysis is the lower limit of detection or less. The portions excluding the composition gradient portion of the hard mask film have a 50 atom % or more chromium content, and the maximum peak for Cr2p in a narrow spectrum obtained via X-ray photoelectron spectroscopy analysis has a binding energy of 574 eV or less.

Mask blank, method of manufacturing imprint mold, method of manufacturing transfer mask, method of manufacturing reflective mask, and method of manufacturing semiconductor device

Mask blank, method for manufacturing reflective mask, and method for manufacturing semiconductor device

Provided is a mask blank () for manufacturing a phase shift mask, the mask blank enabling formation of a high-precision and fine pattern on a light shielding film. The mask blank () in which a phase shift film () made of a material containing silicon, a light shielding film () made of a material containing chromium, oxygen, and carbon, and a hard mask film () made of a material containing one or more elements selected from silicon and tantalum are provided in this order on a transparent substrate () is characterized in that the light shielding film () is a single layer film having a composition gradient portion with an increased oxygen content at a surface on the hard mask film () side and in a region close thereto, the light shielding film () has a maximum peak of N1s narrow spectrum obtained by analysis of X-ray photoelectron spectroscopy of lower detection limit or less, and a part of the light shielding film () excluding the composition gradient portion has a chromium content of 50 atom % or more and has a maximum peak of Cr2p narrow spectrum obtained by analysis of X-ray photoelectron spectroscopy at binding energy of 574 eV or less.

Mask blank, method for manufacturing phase shift mask, and method for manufacturing semiconductor device

In the present invention, an etching stopper film (), a light-blocking film () comprising a material containing one or more elements selected from among silicon and tantalum, and a hard mask film () are laminated in that order on a translucent substrate (). The etching stopper film is made of a material containing chromium, oxygen and carbon, the chromium content is 50 atom % or more, the maximum peak in a N1s narrow spectrum obtained by means of analysis using X-Ray photoelectron spectroscopy is below the detection limit, and a Cr2p narrow spectrum obtained by means of analysis using X-Ray photoelectron spectroscopy has a maximum peak at a bond energy of 574 eV or less.

A mask blank in which a phase shift film provided on a light-permeable substrate includes at least a nitrogen-containing layer and an oxygen-containing layer, the nitrogen-containing layer is made from a silicon nitride-based material and the oxygen-containing layer is made from a silicon oxide-based material, wherein, when the nitrogen-containing layer is subjected to X-ray photoelectron spectroscopy to obtain a maximum peak PSi_f of photoelectron intensity of a Si2p narrow spectrum and the light-permeable substrate is subjected to X-ray photoelectron spectroscopy to obtain a maximum peak PSi_s of photoelectron intensity of a Si2p narrow spectrum, the numerical value (PSi_f)/(PSi_s), which is produced by dividing the maximum peak PSi_f in the nitrogen-containing layer by the maximum peak PSi_s in the light-permeable substrate, is 1.09 or less.

Mask blank, phase shift mask, and method for manufacturing semiconductor device

In the present disclosure, an etching stopper film, a light shielding film comprising a material containing one or more elements selected from silicon and tantalum, and a hard mask film are laminated in that order on a transparent substrate. The etching stopper film is made of a material containing chromium, oxygen and carbon, the chromium content is 50 atomic % or more, the maximum peak in N1s narrow spectrum obtained by means of analysis using X-Ray photoelectron spectroscopy is below the detection limit, and Cr2p narrow spectrum obtained by means of analysis using X-Ray photoelectron spectroscopy has a maximum peak at a binding energy of 574 eV or less.

A mask blank having fast repair rate of EB defect repair and high repair rate ratio to EB defect repair relative to a transparent substrate that includes a phase shift film on a transparent substrate, the phase shift film has a structure including three sets or more of a set of a stacked structure including a high transmitting layer and a low transmitting layer, the high transmitting layer and the low transmitting layer are made of a material consisting of silicon and nitrogen, or a material consisting of silicon, nitrogen, oxygen, and one or more elements selected from a metalloid element and a non-metallic element, the high transmitting layer includes 50 atom % or more nitrogen content and has a thickness of 12 nm or less, and the low transmitting layer includes less than 50 atom % nitrogen content and has a thickness less than the high transmitting layer.

Mask blank, phase shift mask, method for manufacturing phase shift mask, and method for manufacturing semiconductor device

Provided is a mask blank for a phase shift mask including an etching stopper film. A mask blank has a structure where a transparent substrate has layered thereon an etching stopper film and a phase shift film in this order, in which the phase shift film contains silicon and oxygen, in which the phase shift film has a refractive index nof 1.5 or more for light of 193 nm wavelength and an extinction coefficient kof 0.1 or less for light of 193 nm wavelength, in which the etching stopper film has a refractive index nof 2.6 or more for light of 193 nm wavelength and an extinction coefficient kof 0.4 or less for light of 193 nm wavelength, and the refractive index nand the extinction coefficient ksatisfy at least one of k&#x2264;[(&#x2212;0.188&#xd7;n)+0.879] and k&#x2264;[(2.75&#xd7;n)&#x2212;6.945].

Mask blank, phase shift mask, and method of manufacturing semiconductor device

A mask blank in which a phase shift film provided on a transparent substrate includes at least a nitrogen-containing layer and an oxygen-containing layer, the nitrogen-containing layer contains silicon and nitrogen and the oxygen-containing layer contains silicon and oxygen, wherein, when the nitrogen-containing layer is subjected to X-ray photoelectron spectroscopy to obtain a maximum peak PSi_f of photoelectron intensity of a Si2p narrow spectrum and the transparent substrate is subjected to X-ray photoelectron spectroscopy to obtain a maximum peak PSi_s of photoelectron intensity of a Si2p narrow spectrum, the numerical value (PSi_f)/(PSi_s), which is produced by dividing the maximum peak PSi_f in the nitrogen-containing layer by the maximum peak PSi_s in the transparent substrate, is 1.09 or less.

Provided is a mask blank () for manufacturing a phase shift mask. The mask blank () in which a phase shift film () made of a material containing silicon, a light shielding film () made of a material containing chromium, oxygen, and carbon, and a hard mask film () made of a material containing one or more elements selected from silicon and tantalum are provided in this order on a transparent substrate () is characterized in that the light shielding film () is a single layer film having a composition gradient portion with an increased oxygen content at a surface on the hard mask film () side and in a region close thereto, the light shielding film () has a maximum peak of N1s narrow spectrum obtained by analysis of X-ray photoelectron spectroscopy of lower detection limit or less, and a part of the light shielding film () excluding the composition gradient portion has a chromium content of 50 atom % or more and has a maximum peak of Cr2p narrow spectrum obtained by analysis of X-ray photoelectron spectroscopy at binding energy of 574 eV or less.

A mask blank is provided, which makes it possible to form a fine transfer pattern in a light-semitransmissive film with high accuracy even if the light-semitransmissive film is made of a material containing silicon and a light shielding film is made of a material containing chromium. The mask blankhas a structure in which the light-semitransmissive film, etching mask film, and light shielding filmare laminated in this order on the transparent substrate. It is featured in that the light-semitransmissive filmis made of the material containing silicon, the etching mask filmis made of the material containing chromium, the light shielding filmis made of a material containing chromium and oxygen, and a ratio of the etching rate of the light shielding filmto the etching rate of the etching mask filmin the dry etching with an oxygen-containing chlorine-based gas is not less than 3 and not more than 12.

Mask blank, transfer mask, method for manufacturing transfer mask, and method for manufacturing semiconductor device

A mask blank is provided, by which an alignment mark can be formed between a transparent substrate and a laminated structure of a light semitransmissive film, etching stopper film, and light shielding film during manufacture of a transfer mask. The mask blankcomprises a structure in which the light semitransmissive film, etching stopper film, light shielding film, and etching mask filmare laminated in said order on the transparent substrate; the light semitransmissive filmand light shielding filmare made of a material which can be dry etched with a fluorine-based gas; the etching stopper film and etching mask film are made of a material containing chromium; and when a thickness of the etching stopper film is Ds, an etching rate of the etching stopper film with respect to an oxygen-containing chlorine-based gas is Vs, a thickness of the etching mask film is Dm, and an etching rate of the etching mask film with respect to the oxygen-containing chlorine-based gas is Vm, a relationship: (Dm/Vm)&#x3e;(Ds/Vs) is satisfied.

A mask blank comprising an etching stopper film. The mask blank comprises a thin film for pattern formation on a main surface of a transparent substrate, and is featured in that: the thin film for pattern formation contains silicon, an etching stopper film is provided between the transparent substrate and the thin film for pattern formation, and the etching stopper film contains silicon, aluminum, and oxygen.

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Tokyo, Japan

Ryo Ohkubo