Sony Semiconductor Solutions Corporation

Ryo Ogata

Nobutoshi Fujii

Koichiro Zaitsu

Shuji Manda

Naohiko Kimizuka

Shinichi Miyake

Keiji Ohshima

Keiichi Nakazawa

Hirofumi Yamashita

Junpei Yamamoto

Shigetaka Mori

Shinji Nakagawa

Shintaro Okamoto

Yohei Hiura

Tatsuki Miyaji

Yui Yuga

Yasushi Hamamoto

Tomoki Kambe

There is provided a solid-state imaging device including: a first semiconductor layer including a photoelectric converter and an electric charge accumulation section for each pixel, the electric charge accumulation section in which a signal electric charge generated in the photoelectric converter is accumulated; a pixel separation section that is provided in the first semiconductor layer, and partitions a plurality of the pixels from each other; a second semiconductor layer that is provided with a pixel transistor and is stacked on the first semiconductor layer, the pixel transistor that reads the signal electric charge of the electric charge accumulation section; and a first shared coupling section that is provided between the second semiconductor layer and the first semiconductor layer, and is provided to straddle the pixel separation section and is electrically coupled to a plurality of the electric charge accumulation sections.

Solid-state imaging device

Growing community of inventors

Kumamoto, Japan

Ryo Ogata