Tokyo Electron Limited

Tokyo Electron Yamanashi Limited

Ryo Nonaka

Kazuya Nagaseki

Yoshiyuki Kobayashi

Masanori Sato

Tsuyoshi Moriya

Daisuke Hayashi

Eiichi Nishimura

Yasuharu Sasaki

Akira Koshiishi

Shinji Himori

Nobuyuki Nagayama

Minoru Honda

Masahiro Ogasawara

Hidetoshi Hanaoka

Keizo Hirose

Masayuki Tomoyasu

Kazuyuki Mitsuoka

Junichi Sasaki

Kosuke Imafuku

Yukio Naito

Akitoshi Harada

Shosuke Endo

Kazuo Fukasawa

Koichi Murakami

Tadashi Onishi

Kazuhiro Tahara

Yoshio Fukasawa

Takamitsu Takayama

Atsushi Matsuura

Hiroshi Tsuchiya

Chihiro Taguchi

Isao Kobayashi

Natsuki Yabumoto

Kousuke Imafuku

A temperature of only a part in a surface of a mounting table can be set to be higher than or lower than a set temperature of an entire surface of the mounting table. A main flow pathformed within the mounting tableto be arranged over the entire surface thereof; an auxiliary flow pathformed within the mounting table to be arranged in a part of the surface thereof; and a temperature control medium circulating unit that supplies and circulates a temperature control medium adjusted to have a set temperature into and through the main flow path, allows the temperature control medium to be branched, and supplies and circulates the branched temperature control medium into and through the auxiliary flow path after adjusting a temperature of the branched temperature control medium to be a temperature higher than or lower than the set temperature are provided.

Mounting table temperature control device and substrate processing apparatus

A plasma processing method of the present disclosure includes attaching a Si-containing material or a N-containing material to an electrostatic chuck that is provided in a processing container and attached with a reaction product containing C and F, in a state where a workpiece is not mounted on the electrostatic chuck; adsorbing the workpiece by the electrostatic chuck attached with the Si-containing material or the N-containing material when the workpiece is carried into the processing container; processing the workpiece with plasma; and separating the workpiece processed with plasma from the electrostatic chuck attached with the Si-containing material or the N-containing material.

Plasma processing method and plasma processing apparatus

A temperature control system includes a heat transfer medium supply configured to supply a first heat transfer medium of a first temperature into a heat transfer medium path; at least one heat transfer medium storage provided between the heat transfer medium path and the heat transfer medium supply and configured to store a second heat transfer medium of a second temperature higher than the first temperature; a heat transfer medium supply control device provided between the heat transfer medium supply and the heat transfer medium path and between the heat transfer medium storage and the heat transfer medium path and configured to stop a supply of the first heat transfer medium into the heat transfer medium path from the heat transfer medium supply and to supply the second heat transfer medium into the heat transfer medium path from the heat transfer medium storage when a heating unit generates heat.

Temperature control system and temperature control method for substrate mounting table

A substrate processing system that enables foreign matter adhered to a rear surface or a periphery of a substrate to be completely removed. A substrate processing apparatus performs predetermined processing on the substrate. A substrate cleaning apparatus cleans the substrate at least one of before and after the predetermined processing. A jetting apparatus jets a cleaning substance in two phases of a gas phase and a liquid phase and a high-temperature gas towards the rear surface or the periphery of the substrate.

Substrate processing system and substrate cleaning apparatus including a jetting apparatus

A temperature control device for a target substrate includes a mounting table having temperature control members respectively provided in temperature systems to control temperatures of regions of the target substrate to respective predetermined temperature levels; circulation channels through which fluids passing through the temperature control members flow; and heating channels each for flowing therein a heated fluid having a higher temperature compared to the fluids circulating in the circulation channels. The device further includes cooling channels each for flowing therein a cooled fluid having a lower temperature compared to the fluids circulating in the circulation channels; and joining units that join the circulation channels to build the respective temperature control systems, the joining units having flow rate control units that controls flow rate ratios of the fluids supplied from the respective channels to the temperature control members.

Temperature control device for target substrate, temperature control method and plasma processing apparatus including same

Disclosed herein is a plasma processing apparatus that introduces a process gas into an airtight processing container, that applies a radio frequency power to generate plasma, and that conducts a plasma process to an object to be processed arranged in the processing container. The plasma processing apparatus includes: an electrode unit arranged in the processing container, the electrode unit having an electrode for applying the radio frequency power, and a space portion arranged in the electrode unit, the space portion insulating the electrode and the processing container from each other. The space portion communicates with atmospheric air outside the processing container.

Plasma processing apparatus, electrode unit, feeder member and radio frequency feeder rod

A surface processing apparatus which enables the electron beam energy to be reduced with a simplified construction. A wafer W as an object to be processed is placed in a processing chamber. The wafer is mounted on a mounting stage inside the processing chamber. An electron beam irradiating device is provided on the processing chamber such as to face the mounting stage and irradiates at least one electron beam toward the wafer. A self-generated electric field generator is provided between the electron beam irradiating device and the mounting stage and generates at least one self-generated electric field.

Surface processing apparatus

The present invention is constituted of a lower electrode structure ( ) comprising a base table ( ) formed of a conductive material, an electrostatic adsorption member ( ) formed on the base table ( ) and having a dielectric layer ( ) on which the substrate to be mounted and within which an electrode ( ) electrically isolated from the base table ( ) is housed, first wiring ( ) having an end connected to the electrode ( ) of the electrostatic adsorption member, a direct-current source ( ) connected to the other end of the first wiring ( ), second wiring ( ) having an end connected to the base table ( ), a high frequency source ( ) connected to the other end of the second wiring ( ), a third wiring ( ) for connecting the first wiring ( ) and the second wiring ( ), and a capacitor ( ) formed on the third wiring ( ). Plasma processing is performed by disposing the lower electrode structure ( ) in the chamber ( ).

Plasma apparatus and lower electrode thereof

A plasma processing apparatus comprises a chamber, and an upper electrode and a lower electrode, parallelly provided in the chamber to oppose each other at a predetermined interval, for defining a plasma generation region between the electrodes. An object to be processed is mounted on the lower electrode. RF powers are supplied to the electrodes, so that a plasma generates between the electrodes, thereby performing a plasma process with respect to the object to be processed. A cylindrical ground electrode is provided around the plasma generation region in the chamber, for enclosing the plasma in the plasma generation region, and has a plurality of through holes for passing a process gas.

Plasma processing apparatus

A wafer is subjected to a plasma process, using plasma generated while a process gas is fed into a process room, and a plus DC voltage is applied to an electrostatic chuck in order to attract and hold the wafer on the electrostatic chuck by an electrostatic force. A minus DC voltage is applied to the electrostatic chuck while nitrogen gas is fed into the process room in order to cause DC discharge after the processed wafer is separated from the electrostatic chuck and before a next wafer is attracted and held on the electrostatic chuck. By doing so, plus electric charge in the gas is attracted to the electrostatic chuck, so that the surface of the electrostatic chuck is charged with plus electric charge, thereby preventing its attracting function from being deteriorated.

Plasma process utilizing an electrostatic chuck

A plasma processing apparatus has a susceptor with a mount surface on which an electrostatic chuck is arranged. The electrostatic chuck is formed of one inner chuck segment and four outer chuck segments. The chuck segments are arrayed with gaps interposed therebetween to prevent the electrostatic chuck from being distorted due to thermal stress.

Prior to plasma etching, a wafer is placed on conductive support pins which extend through an electrostatic chuck. The electrostatic chuck is disposed on a susceptor incorporating a cooling jacket. A potential for electrostatic attraction is applied to the electrostatic chuck. The support pins are lowered while they are grounded, thus placing the wafer on the electrostatic chuck. Subsequently, the support pins are retracted into the electrostatic chuck to release contact between the wafer and themselves. A heat medium gas is then supplied between the wafer and the electrostatic chuck to improve the heat transfer rate therebetween. A plasma is then generated in a process chamber, and the wafer is etched by using the plasma. Since the heat transfer rate between the wafer and the electrostatic chuck is improved before the generation of the plasma, damage to the wafer due to heat can be prevented, and the starting time required to start an etching process is shortened.

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Nirasaki, Japan

Ryo Nonaka