Kabushiki Kaisha Toshiba

Ryo Mochizuki

Takao Kato

According to one embodiment, a power amplification apparatus includes an field effect transistor (FET), a first decoupling element, a power supply circuit, a second decoupling element, and a third decoupling element. The FET is arranged within a package having an input terminal and an output terminal, and power-amplify an input signal from the input terminal to a transmission signal. The first decoupling element decreases an inductance component of the transmission signal output from the FET. The power supply circuit supplies a driving power to the FET. The second decoupling element cut an RF component. The third decoupling element decreases an impedance of a drain bias circuit over a wide band.

Power amplification apparatus

According to one embodiment, a module connection structure designed to connect a module to other modules. The module includes a dielectric layer, a micro-strip path, a projection, and a plurality of gain adjusting lands. The dielectric layer is formed on a substrate. The micro-strip path is provided on the dielectric layer and configured to transmit a transmission signal input to one end portion, to the other end portion. The projection is formed at edges of the substrate, which are adjacent to the other modules, and protruding from the micro-strip path and the dielectric layer toward the other modules. The plurality of gain adjusting lands is formed adjacent to the micro-strip path, for use in adjusting an input/output gain of the module. The gain adjusting lands uncouple from the micro-strip path or other gain adjusting lands couple to the micro-strip path, thereby to adjust the input/output gain of the module.

Module connection structure

A power amplifying apparatus according to an embodiment includes a first amplifying unit having a first amplifying element to amplify an input signal, a second amplifying unit having a second amplifying element to amplify an output signal from the first amplifying unit; and a bias supply unit giving bias values to the first amplifying element and the second amplifying element, respectively, the bias values causing the first amplifying element and the second amplifying element to operate in a non-linear region.

Power amplifying apparatus and power amplifying method

According to one embodiment, a variable attenuator is arranged in an input stage, a plurality of transistors are cascaded on the later part of this variable attenuator, temperature sensors are arranged in the vicinity of two or more of the plurality of transistors to detect temperatures, the amount of gain change of the plurality of transistors is calculated from the temperature detection results individually obtained by the temperature sensors, the variable attenuator is controlled in such a manner as to reduce the amount gain change so that the input signal level can be controlled, and thereby the gain that tends to vary in accordance with temperature changes can be stabilized.

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Fuchu, Japan

Ryo Mochizuki