Shin-etsu Chemical Co., Ltd.

Ryo Mitsui

Tsutomu Ogihara

Jun Hatakeyama

Koji Hasegawa

Takeru Watanabe

Takayuki Fujiwara

Masaki Ohashi

Osamu Watanabe

Yuji Harada

Yusuke Biyajima

Ryosuke Taniguchi

Shiori Nonaka

Tsukasa Watanabe

Masahiro Kanayama

Seiichiro Tachibana

Kazuhiro Katayama

Kazunori Maeda

Takeshi Nagata

Toshiharu Yano

The present invention is a thermosetting silicon-containing material containing one or more of a repeating unit shown by the following general formula (Sx-1), a repeating unit shown by the following general formula (Sx-2), and a partial structure shown by the following general formula (Sx-3): where Rrepresents an iodine-containing organic group; and Rand Rare each independently identical to R, a hydrogen atom, or a monovalent organic group having 1 to 30 carbon atoms. This provides: a thermosetting silicon-containing material used for forming a resist underlayer film which is capable of contributing to sensitivity enhancement of an upper layer resist while keeping LWR thereof from degrading; a composition for forming a silicon-containing resist underlayer film, the composition containing the thermosetting silicon-containing material; and a patterning process using the composition.

Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process

A thermosetting silicon-containing compound contains one or more of structural units shown by the following general formulae (Sx-1), (Sx-2), and (Sx-3): where Rrepresents a monovalent organic group containing both a phenyl group optionally having a substituent and a non-aromatic ring having 3 to 10 carbon atoms; and R, Reach represent the Ror a monovalent organic group having 1 to 30 carbon atoms. Thus, the present invention provides a thermosetting silicon-containing compound usable in a silicon-containing resist underlayer film material capable of achieving contradictory properties of having both alkaline developer resistance and improved solubility in an alkaline stripping liquid containing no hydrogen peroxide.

Thermosetting silicon-containing compound, composition for forming a silicon-containing film, and patterning process

A resist composition comprising a sulfonium compound of specific structure as PAG has excellent lithography performance factors such as minimal defects, high sensitivity, improved LWR and CDU, and is a quite effective resist material for precise micropatterning.

Sulfonium compound, resist composition, and patterning process

The present invention provides a sulfonium salt capable of providing a resist composition having few defects in photolithography where a high energy beam is used as a light source, and excellent in lithography performance by controlling acid diffusion. The present invention was accomplished by a sulfonium salt including an anion and a cation, the cation having a partial structure represented by the following general formula (1), except for a sulfonium salt having a cation represented by the following general formula (1'), 

Sulfonium salt, resist composition, and patterning process

The present invention provides a silicon-containing compound shown by the following formula (1): wherein R, R, R, R, R, and Reach independently represent a linear, branched, or cyclic alkyl group having 1 to 6 carbon atoms, a phenyl group, a 3,3,3-trifluoropropyl group, or a group shown by &#x2014;(OSiRR)&#x2014;OSiRRR; R, R, R, R, and Rhave the same meanings as Rto R; X represents a linear or branched alkylene group having 3 to 7 carbon atoms optionally having an ether group; and 'n' is an integer in the range of 0 to 100. This provides a stretchable film that has excellent stretchability and strength, with the film surface having excellent repellency, and a method for forming the same; as well as a urethane resin used for the stretchable film; and a silicon-containing compound to be a material of the urethane resin.

Silicon-containing compound, urethane resin, stretchable film, and method for forming the same

The present invention provides a silicon-containing compound shown by the following formula (1): wherein R, R, R, R, R, and Reach independently represent a linear, branched, or cyclic alkyl group having 1 to 6 carbon atoms, a phenyl group, a 3,3,3-trifluoropropyl group, or a group shown by &#x2014;(OSiRR)&#x2014;OSiRRR; R, R, R, R, and Rhave the same meanings as Rto R; 'n' is an integer in the range of 0 to 100; and 'A' represents a linear or branched alkylene group having 1 to 6 carbon atoms. This provides a stretchable film that has excellent stretchability and strength, with the film surface having excellent repellency, and a method for forming the same; as well as a urethane resin used for the stretchable film; and a silicon-containing compound to be a material of the urethane resin.

A sulfonium salt containing an acid-eliminatable substituent group which is effective for improving contrast is highly soluble and uniformly dispersible. A resist composition comprising the sulfonium salt as photoacid generator forms a pattern with a high resolution, rectangularity, and reduced LWR.

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Joetsu, Japan

Ryo Mitsui