Nissan Chemical Industries Limited

Nissan Chemical Corporation

Ryo Karasawa

Tetsuya Shinjo

Keisuke Hashimoto

Yasunobu Someya

Rikimaru Sakamoto

Hirokazu Nishimaki

Takafumi Endo

Hiroshi Ogino

Takahisa Okuno

Tokio Nishita

Shuhei Shigaki

Ryuta Mizuochi

Daigo Saito

Shunsuke Moriya

Makiko Umezaki

Masakazu Kato

Yuki Usui

Satoshi Kamibayashi

Hiroaki Okuyama

A cleaning agent composition for use in removal of a polysiloxane adhesive remaining on a substrate, the composition containing a tetrahydrocarbylammonium fluoride and an organic solvent, wherein the organic solvent contains an aromatic compound represented by formula (1) and a lactam compound represented by formula (2). (in formulas (1) and (2), s represents the number of substituents Rs of the benzene ring and is 2 or 3; s groups of Rs each independently represent a C1 to C6 alkyl group; the total number of carbon atoms in s groups of C1 to C6 alkyl groups is 3 or greater; Rrepresents a C1 to C6 alkyl group; and Rrepresents a C1 to C6 alkylene group.)

Cleaning agent composition and cleaning method

A resist underlayer film-forming composition in which a coating film having high flattening properties is formed on a substrate. A resist underlayer film-forming composition including an epoxy adduct (C) obtained by reacting an epoxy group-containing compound (A) with an epoxy adduct-forming compound (B), wherein one or both of the epoxy group-containing compound (A) and the epoxy adduct-forming compound (B) contain an optionally branched alkyl group having a carbon atom number of three or more. The epoxy adduct-forming compound (B) is at least one compound selected from the group consisting of carboxylic acid (B1), carboxylic anhydride (B2), a phenol compound (B3), a hydroxyl group-containing compound (B4), a thiol compound (B5), an amino compound (B6), and an imide compound (B7). The optionally branched alkyl group having a carbon atom number of three or more is contained in the epoxy adduct-forming compound (B). The optionally branched alkyl group has a Calkyl group.

Resist underlayer film-forming composition comprising epoxy adduct having long-chain alkyl group

A resist underlayer film-forming composition including a novolac resin having a structural group (C) formed by reaction between an aromatic ring of an aromatic compound (A) having at least two amino groups and three Caromatic rings and a vinyl group of an aromatic vinyl compound (B). The structural group (C) may be a group of the following Formula (1): [wherein Ris a divalent group containing at least two amino groups and at least three Caromatic rings]. Rmay be a divalent organic group prepared by removal of two hydrogen atoms from aromatic rings of a compound of the following Formula (2): Rmay be a divalent organic group prepared by removal of two hydrogen atoms from aromatic rings of N,N'-diphenyl-1,4-phenylenediamine.

Resist underlayer film-forming composition that contains triaryldiamine-containing novolac resin to which aromatic vinyl compound is added

An adhesive composition for use in debonding with light irradiation, which composition can achieve debonding through irradiation with light, characterized in that the adhesive composition contains an adhesive component (S) and a light-absorbing organic compound (X); and the light-absorbing organic compound (X) contains, in the molecule thereof, one or more aromatic rings, one or more rings each containing a heteroatom forming the ring, and one or more groups selected from among a carbonyl group and a thiocarbonyl group.

Adhesive composition for peeling off by irradiation with light, layered product, and production method and peeling method for layered product

A cleaning agent composition for use in removal of a polysiloxane adhesive remaining on a substrate, the composition containing a tetrahydrocarbylammonium fluoride and an organic solvent, wherein the organic solvent contains an alkylene glycol dialkyl ether and a lactam compound represented by formula (1). (in formula (1), Rrepresents a C1 to C6 alkyl group, and Rrepresents a C1 to C6 alkylene group.)

There is provided resist underlayer film for lithography process with high dry etching resistance, wiggling resistance, and heat resistance. Resist underlayer film-forming composition for lithography including polymer having unit structure of Formula (1): wherein A is hydroxy group-substituted Carylene group derived from polyhydroxy aromatic compound; B is Carylene group or Cheterocyclic group containing nitrogen atom, oxygen atom, sulfur atom, or combination thereof; Xis H, NH, primary ammonium ion, secondary ammonium ion, tertiary ammonium ion, or quaternary ammonium ion, T is hydrogen atom, Calkyl group or Caryl group that may be substituted with halogen group, hydroxy group, nitro group, amino group, carboxylate ester group, nitrile group, or combination thereof as substituent, or Cheterocyclic group containing nitrogen atom, oxygen atom, sulfur atom, or combination thereof, B and T may form Cring together with carbon atom to which they are bonded. 

Resist underlayer film-forming composition comprising carbonyl-containing polyhydroxy aromatic ring novolac resin

A film with reduced formation of an edge reservoir at a periphery of a film in which the edge reservoir causes an unnecessary residue that cannot be removed by an etching process, and a method for forming the film. A film forming composition for use in a lithography process includes a surfactant containing a polymer and an oligomer having a Cperfluoroalkyl partial structure. The perfluoroalkyl partial structure may further include an alkyl partial structure. The surfactant is contained in an amount of 0.0001% by mass to 1.5% by mass based on the total solid content of the film forming composition. The film forming composition further includes a coating film resin, the coating film resin is a novolac resin, a condensation epoxy resin, a (meth)acylic resin, a polyether-based resin, or a silicon-containing resin, etc. The formed film can be used as a resist underlayer film or a resist overlayer film.

Film forming composition containing fluorine-containing surfactant

A laminated body for polishing a back surface of a wafer, the laminated body including an intermediate layer that is disposed between a support and a circuit surface of the wafer and peelably adheres to the support and the circuit surface, wherein the intermediate layer includes an adhesion layer in contact with the wafer and a peeling layer in contact with the support, and the peeling layer contains a novolac resin that absorbs light with a wavelength of 190 nm to 600 nm incident through the support, resulting in modification. The light transmittance of the peeling layer at a wavelength range of 190 nm to 600 nm may be 1 to 90%. The modification caused by absorption of light may be photodecomposition of the novolac resin.

Laminated body including novolac resin as peeling layer

Methods for forming a film with reduced formation of an edge reservoir at a periphery of a film in which the edge reservoir causes an unnecessary residue that cannot be removed by an etching process. A film forming composition for use in a lithography process includes a surfactant containing a polymer and an oligomer having a Cperfluoroalkyl partial structure. The perfluoroalkyl partial structure may further include an alkyl partial structure. The surfactant is contained in an amount of 0.0001% by mass to 1.5% by mass based on the total solid content of the film forming composition. The film forming composition further includes a coating film resin, the coating film resin is a novolac resin, a condensation epoxy resin, a (meth)acrylic resin, a polyether-based resin, or a silicon-containing resin, etc. The formed film can be used as a resist underlayer film or a resist overlayer film.

A resist underlayer film not undergoing intermixing with a resist layer, having high dry etching and heat resistance, exhibiting high temperature low mass loss, and exhibiting even stepped substrate coatability, includes a polymer containing a unit structure of the formula (1):  The unit structure of formula (1) is a unit structure of the formula (2):  A method for producing a semiconductor device, includes forming, on a semiconductor substrate, a resist underlayer film using a resist underlayer film-forming composition, forming a hard mask on the resist underlayer film, a resist film on the hard mask, a resist pattern by irradiation with light or an electron beam and development of the resist film, a pattern by etching the hard mask using the resist pattern, a pattern by etching the underlayer film using the patterned hard mask, and processing the substrate using the patterned resist underlayer film.

Resist underlayer film-forming composition containing naphthol aralkyl resin

A resist underlayer film-forming composition for lithography capable of being dry-etched during pattern transfer from the upper layer or during substrate processing and capable of being removed with an alkaline aqueous solution after the substrate processing. The composition includes a polymer (A) having an acrylamide structure or an acrylic acid ester structure; a polymer (B) having a blocked isocyanate structure; and a solvent (C). The polymer (A) is a polymer including a unit structure of Formula (1). The polymer (B) is a polymer including a unit structure of Formula (2). A method for manufacturing a semiconductor device includes steps for: forming a resist pattern; etching an inorganic hard mask layer with use of the resist pattern; etching a resist underlayer film with use of the pattered inorganic hard mask layer; and processing a semiconductor substrate with use of the pattered resist underlayer film. 

Resist underlayer film-forming composition for lithography containing polymer having blocked isocyanate structure

A method forms a resist underlayer film that has high resistance to dry etching using a gas containing a fluorocarbon. A method for forming a resist underlayer film includes the steps of: applying to a substrate a resist underlayer film-forming composition containing a fullerene derivative in which one to six molecules of malonic acid diester of the following Formula (1): wherein two Rs are each independently a Calkyl group, are added to one molecule of fullerene, a compound having at least two epoxy groups, and a solvent; and baking the substrate applied with the resist underlayer film-forming composition at least one time at a temperature of 240&#xb0; C. or higher under an atmosphere of nitrogen, argon, or a mixture thereof.

Method for forming resist underlayer film

A resist underlayer film-forming composition for lithography capable of being dry-etched during pattern transfer from the upper layer or during substrate processing and capable of being removed with an alkaline aqueous solution after the substrate processing. A resist underlayer film-forming composition for lithography includes a polymer (A) including a unit structure of Formula (1) and a unit structure of Formula (2); a crosslinkable compound (B) having at least two groups selected from blocked isocyanate groups, methylol group, or Calkoxy methyl groups; and a solvent (C), characterized in that the polymer (A) is a polymer in which the unit structure of Formula (1) and the unit structure of Formula (2) are copolymerized in a mol % ratio of the unit structure of Formula (1):the unit structure of Formula (2)=25 to 60:75 to 40. 

Resist underlayer film-forming composition for lithography containing polymer having acrylamide structure and acrylic acid ester structure

Whereas, conventionally, ashing had been used at the time of removal, the present invention provides a material for forming an organic hard mask that can be removed by an alkaline aqueous solution, and thus can be expected to reduce damage to the substrate at the time of the removal. A composition for forming an organic hard mask layer comprising: a polymer (A) including a structural unit of Formula (1) and a structural unit of Formula (2); a crosslinkable compound (B) including at least two of blocked isocyanate groups, methylol groups, or Calkoxymethyl groups; and a solvent (C), wherein an organic hard mask layer obtained from the composition for forming an organic hard mask layer is used at the lowest layer in a lithography process using a multi-layer film, wherein Rto Rhave the same definition as ones in the specification.

Composition for forming organic hard mask layer for use in lithography containing polymer having acrylamide structure

There is provided a composition for forming a resist underlayer film which has high dry-etching resistance and wiggling resistance, and achieves excellent planarizing properties for a semiconductor substrate surface having level differences or irregular portions. A resist underlayer film-forming composition including a phenol novolac resin that is obtained by causing a compound that has at least three phenolic groups, in which each of the phenolic groups has a structure bonded to a tertiary carbon atom or has a structure bonded to a quaternary carbon atom to which a methyl group binds, to react with an aromatic aldehyde or an aromatic ketone in the presence of an acid catalyst. The phenol novolac resin preferably contains a unit structure of Formula (1), a unit structure of Formula (2), a unit structure of Formula (3), a unit structure of Formula (4), or a combination of these unit structures: 

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Toyama, Japan

Ryo Karasawa