Sandisk Technologies Inc.

Ryo Kambayashi

Fumitaka Amano

Raghuveer S Makala

Rahul Sharangpani

Kazuto Ohsawa

A three dimensional memory device includes: an alternating stack of insulating layers and electrically conductive layers, memory openings vertically extending through the alternating stack, memory opening fill structures located in the memory openings, and a backside trench fill structure that includes a backside trench insulating spacer and a backside contact via structure. The backside contact via structure includes a first metallic nitride liner including a nitride of a first metal, a first metal core fill conductive material portion include a second metal, and a second metallic nitride liner including a nitride of the second metal located between an inner sidewall of the first metallic nitride liner and an outer sidewall of the first metal core fill conductive material portion.

Three-dimensional memory device including composite backside metal fill structures

A three dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate; memory stack structures vertically extending through the alternating stack; and a backside trench fill structure. The backside trench fill structure includes a backside trench insulating spacer and a backside contact via structure. The backside contact via structure may include a tapered metallic nitride liner and at least one core fill conductive material portion. Alternatively, the backside contact via structure may include a tungsten nitride liner, a metallic nitride liner other than tungsten nitride, and at least one core fill conductive material portion.

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Yokkaichi, Japan

Ryo Kambayashi