Hitachi High-tech Corporation

Hitachi-high-technologies Corporation

Elpida Memory, Inc.

Other

Agc Inc.

Ps4 Luxco S.a.r.l.

Ryo Hirano

Takayuki Mizuno

Akira Kageyama

Tsunenori Nomaguchi

Junichi Katane

Tomohisa Ohtaki

Toru Fujimura

Masaaki Komori

Yasuhiko Nara

Katsuo Ohki

Shigehiko Kato

Chisato Kamiya

Toshihide Agemura

Kazuhiko Shiono

Yukihide Suzuki

Hideo Morishita

Hidekazu Egawa

Motoshi Nakayama

The present invention relates to an optical filter including a resin base material including an infrared-absorbing pigment layer, and a pair of inorganic dielectric layers which are respectively disposed on or above both main surfaces of the resin base material as outermost layers, in which at least one of the pair of inorganic dielectric layers satisfies at least one of a condition in which a film thickness is 4 μm or greater, and a condition in which the number of layers is 30 or greater, and a ratio of a total film thickness of the pair of inorganic dielectric layers to a film thickness of the resin base material is greater than 8%.

Optical filter and imaging device

A method for manufacturing a semiconductor device in which probes and the layout of the electrode pads of a test element group (TEG) are associated is provided. As a semiconductor device is miniaturized, a scribe area on a wafer also tends to decrease. Accordingly, it is necessary to reduce the size of a TEG arranged in the scribe area, and efficiently arrange an electrode pad for probe contact. Thus, it is necessary to associate the probes and the layout of the electrode pad. According to the method, a layout of a TEG electrode pad corresponding to a plurality of probes arranged in a fan shape or probes manufactured by Micro Electro Mechanical Systems (MEMS) technology is provided.

Method for manufacturing semiconductor device

As a semiconductor device is miniaturized, a scribe area on a wafer also tends to decrease. Accordingly, it is necessary to reduce the size of a TEG arranged in the scribe area, and efficiently arrange an electrode pad for probe contact. Therefore, it is necessary to associate probes and the efficient layout of the electrode pad. The purpose of the present invention is to provide a technique for associating probes and the layout of the electrode pads of a TEG so as to facilitate the evaluation of electrical characteristics. According to an evaluation apparatus for a semiconductor device of the present invention, the above described problems can be solved by providing a plurality of probes arranged in a fan shape or probes manufactured by Micro Electro Mechanical Systems (MEMS) technology.

Evaluation apparatus for semiconductor device

The present invention provides a charged particle beam apparatus capable of efficiently reducing the effect of a residual magnetic field when SEM observation is performed. The charged particle beam apparatus according to the present invention includes a first mode for passing a direct current to a second coil after turning off a first coil, and a second mode for passing an alternating current to the second coil after turning off the first coil.

Charged particle beam device

The present invention realizes a composite charged particle beam apparatus capable of suppressing a leakage magnetic field from a pole piece forming an objective lens of an SEM with a simple structure. The charged particle beam apparatus according to the present invention obtains an ion beam observation image while passing a current to a first coil constituting the objective lens, and performs an operation of reducing the image shift by passing a current to a second coil with a plurality of current values, and determines a current to be passed to the second coil based on a difference between the operations.

Charged particle beam apparatus

As a semiconductor device is miniaturized, a scribe area on a wafer also tends to decrease. Accordingly, it is necessary to reduce the size of a TEG arranged in the scribe area, and efficiently arrange an electrode pad for probe contact. Therefore, it is necessary to associate probes and the efficient layout of the electrode pad. The purpose of the present invention is to provide a technique for associating probes and the layout of an electrode pad of a TEG to facilitate the evaluation of electrical characteristics. According to the present invention, the above described problem can be solved by arranging a plurality of probes in a fan shape or manufacturing the probes with micro electro mechanical systems (MEMS) technology.

Probe module and probe

A charged particle beam device includes: a charged particle source that emits a charged particle beam; a boosting electrode disposed between the charged particle source and a sample to form a path of the charged particle beam and to accelerate and decelerate the charged particle beam; a first pole piece that covers the boosting electrode; a second pole piece that covers the first pole piece; a first lens coil disposed outside the first pole piece and inside the second pole piece to form a first lens; a second lens coil disposed outside the second pole piece to form a second lens; and a control electrode formed between a distal end portion of the first pole piece and a distal end portion of the second pole piece to control an electric field formed between the sample and the distal end portion of the second pole piece.

A semiconductor device includes an internal circuit, a power supply control circuit which controls supply of a power supply to the internal circuit upon receipt of a first control signal, and a control signal generation circuit which outputs the first control signal upon receipt of a second control signal. The control signal generation circuit does not deactivate the first control signal when an inactive period of the second control signal is equal to or less than a first period and deactivates the first control signal when the inactive period of the second control signal is more than the first period.

Semiconductor device and power supply control method of the semiconductor device

A semiconductor integrated circuit includes power supply pads of two or more kinds, switches each of which is connected between adjacent two of the power supply pads to allow short-circuiting them, and at least one control line connected to control terminals of the switches according to the kinds of the power supply pads connected to the switches.

Semiconductor integrated circuit

A differential amplifier circuit is provided with transfer gates for interrupting input signals to control a timing of supplying the input signals and a timing of starting the differential amplifier circuit.

Growing community of inventors

Tokyo, Japan

Ryo Hirano