Kioxia Corporation

Ryo Hikida

Kohei Nyui

A semiconductor storage device includes: a first semiconductor layer through first conductive layers; a gate insulating film between the first conductive layers and the first semiconductor layer; a first structure facing the first conductive layers; a second semiconductor layer connected to the first semiconductor layer and the first structure; a third semiconductor layer between the second semiconductor layer and the first conductive layers; a fourth semiconductor layer including a first portion along a bottom surface of the third semiconductor layer and a second portion along a top surface of the second semiconductor layer; and a first insulating layer, between the first and second portions, including a first region spaced from the first structure with a distance longer than a first distance that contains a nitride film, and a second region spaced from the first structure with a distance shorter than the first distance that does not contain nitrogen.

Growing community of inventors

Yokkaichi Mie, Japan

Ryo Hikida