Canon Kabushiki Kaisha

Renesas Electronics Corporation

Ryo Hayashi

Masafumi Sano

Hideya Kumomi

Hisato Yabuta

Nobuyuki Kaji

Masato Ofuji

Yasuyoshi Takai

Yoshinori Tateishi

Keishi Saito

Akira Sakai

Kenji Takahashi

Norio Kaneko

Takehiko Kawasaki

Masahiko Tonogaki

Hisae Shimizu

Ayanori Endo

Hideyuki Omura

Ayumu Sato

Tatsuya Iwasaki

Noboru Toyama

Shotaro Okabe

Mitsuyuki Niwa

Shuichiro Sugiyama

Masahiro Kanai

Satoru Yamada

Katsumi Abe

Takaharu Kondo

Tatsuyuki Aoike

Jinsho Matsuyama

Yusuke Miyamoto

Yuzo Koda

Yuichi Sonoda

Tomohiro Watanabe

Masumitsu Iwata

Kojiro Nishi

Yuzo Shigesato

Toru Den

Satoshi Kojima

Yasushi Fujioka

Yukiko Iwasaki

Junichiro Hashizume

Yoshinori Sugiura

Takahiro Yajima

Hiroyuki Ozaki

Tadashi Hori

Hidetoshi Tsuzuki

Sho Suzuki

Seiichiro Yaginuma

Taihei Mukaide

Tadashi Sawayama

Hirokazu Ohtoshi

Masatoshi Watanabe

Koichiro Moriyama

Mikio Shimada

Nobuo Tokutake

Makoto Higashikawa

Toshihiro Yamashita

Naho Itagaki

Tomonori Nishimoto

Kazunori Fukuda

Yasuhiko Akaike

A field-effect transistor includes a substrate, a source electrode, a drain electrode, a gate electrode, a gate-insulating film, and an active layer. The active layer contains an oxide having a transmittance of 70% or more in the wavelength range of 400 to 800 nm. A light-shielding member is provided as a light-shielding structure for the active layer, for example, on the bottom face of the substrate.

Field-effect transistor including transparent oxide and light-shielding member, and display utilizing the transistor

There is provided a light emitting display apparatus including at least a light emitting element and a thin film transistor (TFT) for driving the light emitting element, characterized in that a mechanism is provided in which a semiconductor constituting the TFT is irradiated with at least a part of light whose wavelength is longer than a predetermined wavelength among the light emitted by the light emitting element.

Light emitting display apparatus

The reliability of semiconductor device is improved. The method of manufacturing a semiconductor device has a step of performing plasma treatment prior to the wire bonding step, and the surface roughness of the pads after the plasma treatment step is equal to or less than 3.3 nm.

Semiconductor device and method of manufacturing thereof

Provided is a bottom gate type thin film transistor including on a substrate () a gate electrode (), a first insulating film () as a gate insulating film, an oxide semiconductor layer () as a channel layer, a second insulating film () as a protective layer, a source electrode (), and a drain electrode (), in which the oxide semiconductor layer () includes an oxide including at least one selected from the group consisting of In, Zn, and Sn, and the second insulating film () includes an amorphous oxide insulator formed so as to be in contact with the oxide semiconductor layer () and contains therein 3.8&#xd7;10molecules/cmor more of a desorbed gas observed as oxygen by temperature programmed desorption mass spectrometry.

Bottom gate type thin film transistor, method of manufacturing the same, and display apparatus

Thin film transistor, method of manufacturing the same, and display apparatus

Disclosed is a method of driving a transistor including a semiconductor layer, a first insulating layer, a second insulating layer, a first conductive layer, and a second conductive layer such that the semiconductor layer is disposed between the first and second insulating layers, one surface of the first insulating layer opposite the other surface in contact with the semiconductor layer is in contact with the first conductive layer, one surface of the second insulating layer opposite the other surface in contact with the semiconductor layer is in contact with the second conductive layer. The method includes applying a voltage VBG that satisfies the relation of VBG&#x2266;VON&#xd7;C/(C+C) to the second conductive layer.

Method of driving transistor and device including transistor driven by the method

There is provided a thin-film transistor including at least a substrate, a gate electrode, a gate insulating layer, an oxide semiconductor layer, a source electrode, a drain electrode and a protective layer, wherein the oxide semiconductor layer is an amorphous oxide containing at least one of the elements In, Ga and Zn, the gate electrode-side carrier density of the oxide semiconductor layer is higher than the protective layer-side carrier density thereof, and the film thickness of the oxide semiconductor layer is 30 nm&#xb1;15 nm.

Thin-film transistor and method of manufacturing same

In order to suppress an influence of an electrical stress on a TFT characteristic in use of a TFT, a light emitting display apparatus according to the present invention comprises organic EL devices and driving circuits for driving the organic EL devices. The driving circuit includes plural pixels each having a thin film transistor of which a threshold voltage reversibly changes due to the electrical stress applied between a gate terminal and a source terminal, and a voltage applying unit which sets gate potential of the thin film transistor higher than source potential. The voltage applying unit applies the electrical stress between the gate terminal and the source terminal at a time when the thin film transistor is not driven, so as to drive the thin film transistor in a region that the threshold voltage is saturated to the electrical stress.

Thin film transistor circuit, light emitting display apparatus, and driving method thereof

A pixel circuit including at least a light emitting element, and a thin film transistor that supplies to the light emitting element a first current controlling a gray scale according to luminance-current characteristics of the light emitting element, wherein the thin film transistor has a back gate electrode, at least a driving period in which the thin film transistor supplies the first current to the light emitting element, and a writing period in which a second current is written to the thin film transistor before the driving period in order to pass the first current to the thin film transistor during the driving period are included, and by changing voltages which are applied to the back gate electrode in the driving period and the writing period, current capability to a gate voltage of the thin film transistor is made to differ.

Pixel circuit with a writing period and a driving period, and driving method thereof

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Yokohama, Japan

Ryo Hayashi