Hitachi Metals, Ltd.

Mitsubishi Electric Corporation

Konica Minolta, Inc.

Proterial, Ltd.

Ryo Goto

Yoshitaka Kimura

Rei Yoneyama

Akihiko Yamashita

Takehiro Araki

Akira Goto

Mariko Ono

Masanobu Yamazaki

Manabu Toyoda

Fumio Nitanda

Yasutaka Shimizu

Makoto Ushijima

Tadafumi Tomitani

Hiroshi Matsui

Chiharu Mitsumata

Takayuki Fukaya

Hideji Takahashi

Shinichi Ito

Kenichi Yamamoto

Masayuki Ando

Motoki Imanishi

Koichiro Noguchi

Takenori Suenaga

Takami Otsuki

Shiori Uota

Haruhiko Murakami

Masahiro Ao

Shigekazu Suwabe

Kazumi Noguchi

Hitoshi Iwata

Masaaki Ashizawa

Tetsuroh Kawai

Shingo Tomioka

Shuji Sudo

Keiichi Kondo

Kiyoshi Nakajima

Akira Naruse

Shuji Koike

Kenta Matsuura

Hidetaka Matsuo

Akinori Sawada

Fujio Tsuneda

Shizuyo Ueda

An object is to provide a semiconductor device capable of reducing inductance between a high potential terminal and a low potential terminal while achieving downsizing of the semiconductor device. A semiconductor device includes: the insulating substrate; the circuit pattern including a low potential circuit pattern and a high potential circuit pattern provided on a region adjacent to the low potential circuit pattern; a plurality of semiconductor chips mounted on the circuit pattern; a low potential terminal having one end portion connected to the low potential circuit pattern; and a high potential terminal having one end portion connected to the high potential circuit pattern, wherein the high potential terminal and the low potential terminal include electrode parts and constituting parallel flat plates vertically disposed in parallel to each other and extending on a side of the low potential circuit pattern and electrode parts and protruding from the insulating substrate.

Semiconductor device

Provided is a black heart malleable cast iron and a method for manufacturing the same which can significantly shorten the time required for graphitization, as compared with the prior art. The black heart malleable cast iron includes a matrix of ferrite and lump graphite included in the matrix, and includes at least one selected from the group consisting of (i) 0.0050% by mass or more and 0.15% by mass or less of bismuth and 0.020% by mass or more of manganese, and (ii) 0.0050% by mass or more and 1.0% by mass or less of aluminum and 0.0050% by mass or more of nitrogen. In addition, the grain size of the matrix is 8.0 or more and 10.0 or less in terms of grain size number, numerically determined by comparison between a metallographic photograph of the matrix and a standard grain size chart.

Black heart malleable cast-iron and method for manufacturing same

A semiconductor module includes a semiconductor element, a substrate on which the semiconductor module is mounted, a heat radiating plate on which the substrate is mounted, a resin case, and a first main current electrode and a second main current electrode, in which in the first main current electrode and the second main current electrode, one end of each thereof is joined to a circuit pattern on the substrate, an other end of each thereof is extended through and incorporated in a side wall of the resin case so as to project outward of the resin case, and each thereof has at least a portion of overlap at which a part thereof overlaps in parallel with each other with a gap therebetween, and each thereof has a slope portion provided between an external projection portion and an internal projection portion.

Semiconductor module

An object of the present disclosure is to provide a semiconductor device capable of confirming withstand voltage of a snubber circuit after providing the snubber circuit and a method of manufacturing the semiconductor device. A semiconductor device according to the present disclosure includes: an insulating substrate; a circuit patterns provided on the insulating substrate; a snubber circuit substrate provided on the insulating substrate separately from the circuit patterns; a resistance provided on one of the circuit patterns and the snubber circuit substrate; a capacitor provided on another one of the circuit patterns and the snubber circuit substrate; and at least one semiconductor element electrically connected to the resistance and the capacitor.

Semiconductor device and method of manufacturing semiconductor device

Provided is a method capable of producing a plated black heart malleable cast iron member having a plating layer with excellent adhesiveness to a black heart malleable cast iron member, while having less burden on the environment, compared to conventional methods.

Method for producing plated black heart malleable cast iron member, plated black heart malleable cast iron member, and pipe joint

A posture adjusting apparatus includes: an ink ejector that has a detachable inkjet head that ejects ink; and a posture adjuster for adjusting a posture of the ink ejector. The ink ejector includes a head fixing member to/from which the inkjet head is attached and detached, and is movable between a first position where an image is formed on a recording medium by the inkjet head and a second position where the inkjet head is attached and detached, and the posture adjuster allows adjustment of an angle of the head fixing member in the second position.

Posture adjusting apparatus and inkjet image forming apparatus

A black heart malleable cast iron including carbon of not lower than 2.0% and not higher than 3.4%; silicon of not lower than 0% and not higher than 1.4%; aluminum of not lower than 2.0% and not higher than 6.0%, which are all expressed by percent by mass; and balance iron and inevitable impurities, wherein a value of a carbon equivalent CE expressed by Equation (1) is not lower than 3.0% and not higher than 4.2%, where C denotes a content of the carbon expressed by percent by mass, Si denotes a content of the silicon expressed by percent by mass and Al denotes a content of the aluminum expressed by percent by mass: CE=C+Si/3+Al/8 (1).

Black heart malleable cast iron and manufacturing method thereof

A driving device for a semiconductor element includes: a plurality of detection circuits that detect different types of abnormalities of the semiconductor element; a logic circuit that generates an error signal when at least one of the detection circuits detects an abnormality; an alarm signal generating circuit that receives the error signal and generates an alarm signal made of one or a plurality of pulses, the alarm signal having a different pulse width for each of the detection circuits that has detected an abnormality; and a protection operation determining circuit that determines whether or not a protection function of the semiconductor element is operating based on the error signal and the alarm signal, and shuts off input of a drive signal to the semiconductor element when it is determined that the protection function is operating.

Driving device for semiconductor element

An image forming apparatus includes an image forming unit for forming an image on a sheet and a sheet conveying unit for conveying the sheet along a conveying path extending in a substantially horizontal direction in a lower portion of the image forming unit. The image forming apparatus includes a recovery container which is provided in front of the image forming unit and above the conveying path, and accommodates the waste toner discharged from the image forming unit. The image forming apparatus includes a waste toner conveying pipe that conveys the waste toner discharged from the image forming unit to the recovery container, without passing through the rear portion and the side portion of the image forming unit.

Image forming apparatus provided with recovery container for waste toner

It is an object to provide a power semiconductor module having a case shared for base plates of different sizes and having a high-stability base plate. The power semiconductor module according to the present invention includes: a base plate; an insulating substrate disposed on a first main surface of the base plate; a semiconductor chip disposed on an insulating substrate; a case for enclosing the base plate except a second main surface of the base plate facing the first main surface, the insulating substrate, and the semiconductor chip; and a spacer provided between the outer periphery of the base plate and the inner periphery of the case and in contact with both. The spacer has a bonding surface with a side surface of the base plate and the first main surface in the contact with the outer periphery of the base plate.

Power semiconductor module comprising a case, base plate, and spacer

Growing community of inventors

Tokyo, Japan

Ryo Goto