Semiconductor Energy Laboratory Co., Ltd.

Ryo Arasawa

Hideaki Shishido

Shunpei Yamazaki

Hiroyuki Miyake

Atsushi Umezaki

Kouhei Toyotaka

Jun Koyama

Masashi Tsubuku

Kosei Noda

Tomoyuki Iwabuchi

Koji Kusunoki

Shinya Sasagawa

Katsuaki Tochibayashi

Tsutomu Murakawa

Erika Takahashi

Shigeharu Monoe

Aya Miyazaki

Hidekazu Miyairi

Koji Dairiki

Takahiro Fukutome

An object is to provide a light-emitting display device in which a pixel including a thin film transistor using an oxide semiconductor has a high aperture ratio. The light-emitting display device includes a plurality of pixels each including a thin film transistor and a light-emitting element. The pixel is electrically connected to a first wiring functioning as a scan line. The thin film transistor includes an oxide semiconductor layer over the first wiring with a gate insulating film therebetween. The oxide semiconductor layer is extended beyond the edge of a region where the first wiring is provided. The light-emitting element and the oxide semiconductor layer overlap with each other.

Light-emitting display device and electronic device including a first pixel and a second pixel and an oxide semiconductor region overlapping a light-emitting region

It is an object to provide a semiconductor device which can supply a signal with sufficient amplitude to a scan line while power consumption is kept small. Further, it is an object to provide a semiconductor device which can suppress distortion of a signal supplied to the scan line and shorten a rising time and a falling time while power consumption is kept small. A semiconductor device which includes a plurality of pixels each including a display element and at least one first transistor and a scan line driver circuit supplying a signal for selecting the plurality of pixels to a scan line. A light-transmitting conductive layer is used for a pixel electrode layer of the display element, a gate electrode layer of the first transistor, source and drain electrode layers of the first transistor, and the scan line. The scan line driver circuit includes a second transistor and a capacitor for holding a voltage between a gate electrode layer of the second transistor and a source electrode layer of the second transistor. The source electrode of the second transistor is connected to the scan line.

Semiconductor device

A semiconductor device in which variations in characteristics, deterioration of elements, and abnormality in shape are inhibited is provided. The semiconductor device includes a first region including a plurality of elements and a second region including a plurality of dummy elements. The second region is provided in an outer edge of the first region, and the element and the dummy element each include an oxide semiconductor. The element and the dummy element have the same structure, and a structure body included in the element and a structure body included in the dummy element are formed with the same material and provided in the same layer. The oxide semiconductor includes In, an element M (M is Al, Ga, Y, or Sn), and Zn.

Light-emitting display device having a first pixel and a second pixel and an oxide semiconductor layer having a region overlapping a light-emitting region of the second pixel

It is an object to provide a semiconductor device which can supply a signal with sufficient amplitude to a scan line while power consumption is kept small. Further, it is an object to provide a semiconductor device which can suppress distortion of a signal supplied to the scan line and shorten a rising time and a falling time while power consumption is kept small A semiconductor device which includes a plurality of pixels each including a display element and at least one first transistor and a scan line driver circuit supplying a signal for selecting the plurality of pixels to a scan line. A light-transmitting conductive layer is used for a pixel electrode layer of the display element, a gate electrode layer of the first transistor, source and drain electrode layers of the first transistor, and the scan line. The scan line driver circuit includes a second transistor and a capacitor for holding a voltage between a gate electrode layer of the second transistor and a source electrode layer of the second transistor. The source electrode of the second transistor is connected to the scan line.

Semiconductor device and semiconductor device manufacturing method

Light-emitting display device and electronic device including an oxide semiconductor layer

A liquid crystal display device is provided in which the aperture ratio can be increased in a pixel including a thin film transistor in which an oxide semiconductor is used. In the liquid crystal display device, the thin film transistor including a gate electrode, a gate insulating layer and an oxide semiconductor layer which are provided so as to overlap with the gate electrode, and a source electrode and a drain electrode which overlap part of the oxide semiconductor layer is provided between a signal line and a pixel electrode which are provided in a pixel portion. The off-current of the thin film transistor is 1&#xd7;10A or less. A potential can be held only by a liquid crystal capacitor, without a capacitor which is parallel to a liquid crystal element, and a capacitor connected to the pixel electrode is not formed in the pixel portion.

Liquid crystal display device and electronic device including the same

Light-emitting display device including a first pixel and a second pixel

In a liquid crystal display device including a plurality of pixels in a display portion and configured to performed display in a plurality of frame periods, each of the frame periods includes a writing period and a holding period, and after an image signal is input to each of the plurality of pixels in the writing period, a transistor included in each of the plurality of pixels is turned off and the image signal is held for at least 30 seconds in the holding period. The pixel includes a semiconductor layer including an oxide semiconductor layer, and the oxide semiconductor layer has a carrier concentration of less than 1&#xd7;10/cm.

Liquid crystal display device and electronic device including the liquid crystal display device

Light-emitting display device having oxide semiconductor layer overlapping with adjacent pixel electrode

An object is to provide a driving method of a liquid crystal display device with a low power consumption and a high image quality. A pixel includes a liquid crystal element and a transistor which controls supply of an image signal to the liquid crystal element. The transistor includes, in a channel formation region, a semiconductor which has a wider band gap than a silicon semiconductor and has a lower intrinsic carrier density than silicon, and has an extremely low off-state current. In inversion driving of pixels, image signals having opposite polarities are input to a pair of signal lines between which a pixel electrode is disposed. By employing such a structure, the quality of the displayed image can be increased even in the absence of a capacitor in the pixel.

Driving method of liquid crystal display device

Each of a plurality of pixels includes a transistor, a capacitor, and a display element. One terminal of the capacitor is electrically connected to a first line. The other terminal of the capacitor is electrically connected to a gate of the transistor. In a first period, a first terminal of the transistor is electrically connected to the gate of the transistor and the gate of the transistor is electrically connected to a second line. In a second period, the first terminal of the transistor is electrically connected to the gate of the transistor and a second terminal of the transistor is electrically connected to a third line. In a third period, the first terminal of the transistor is electrically connected to the first line and the second terminal of the transistor is electrically connected to the display element.

Display device including light emitting element

Growing community of inventors

Kanagawa, Japan

Ryo Arasawa