Advanced Micro Devices Corporation

Ryan Thomas Freese

Russell J Schreiber

Eric W Busta

John J Wuu

Carson Donahue Henrion

Michael K Ciraula

A sense amplifier is biased to reduce leakage current equalize matched transistor bias during an idle state. A first read select transistor couples a true bit line and a sense amplifier true (SAT) signal line and a second read select transistor couples a complement bit line and a sense amplifier complement (SAC) signal line. The SAT and SAC signal lines are precharged during a precharge state. An equalization circuit shorts the SAT and SAC signal lines during the precharge state. A differential sense amplifier circuit for latching the memory cell value is coupled to the SAT signal line and the SAC signal line. The precharge circuit and the differential sense amplifier circuit are turned off during a sleep state to cause the SAT and SAC signal lines to float. A sleep circuit shorts the SAT and SAC signal lines during the sleep state.

Sense amplifier sleep state for leakage savings without bias mismatch

A system and method for efficient power, performance and stability tradeoffs of memory accesses are described. A memory includes an array of cells for storing data and a sense amplifier for controlling access to the array. The cells receive word line inputs for data access driven by a first voltage supply. The sense amplifier includes first precharge logic, which receives a first precharge input driven by the first power supply used by the array. Therefore, the first precharge input has similar timing characteristics as the word line input used in the array. The sense amplifier includes second precharge logic, which receives a second precharge input driven by a second power supply not used by the array and provides precharged values on bit lines driven by the second power supply.

Limiting bitline precharge drive fight current using multiple power domains

An interlock circuit utilizes a single combinatorial pseudo-dynamic logic gate to take inputs from two voltage domains at the same time without requiring either input to be level shifted. The interlock design allows hold timing to be met across a large voltage range of both supplies in a dual-voltage supply environment while not significantly hurting setup time by having much lower latency than the latency of a level shifter.

Pseudo-dynamic circuit for multi-voltage timing interlocks

Apparatus for memory elements and related methods for performing an allocate operation are provided. An exemplary memory element includes a plurality of way memory elements and a replacement module coupled to the plurality of way memory elements. Each way memory element is configured to selectively output data bits maintained at an input address. The replacement module is configured to enable output of the data bits maintained at the input address of a way memory element of the plurality of way memory elements for replacement in response to an allocate instruction including the input address.

Growing community of inventors

Fort Collins, CO, United States of America

Ryan Thomas Freese