Applied Materials, Inc.

Ryan T Downey

James Omer L'Heureux

Michael Johnson

Yan Rozenzon

Hemant P Mungekar

Daemian Raj Benjamin Raj

Andreas Neuber

Liliya Krivulina

Maxime Cayer

Tony H Tong

Syed A Alam

David Muquing Hou

Peter Standish

Joseph A Van Gompel

Uwe P Haller

Robert Casanova

Gino Gerardo Crispieri

John L Koenig

Mike M Huang

Bharath Kumar Hanchanoor Rathnakara Gowda

Rony David Mathew

James L'heureux

Collen Leng

Exemplary semiconductor processing systems may include a gas source coupled with a number of processing chambers. The gas source may include a controller. Each chamber may include an exhaust assembly having a foreline and a pump. The systems may include at least one abatement system coupled with each pump. The systems may include a plurality of exhaust lines that extend between each pump and the abatement system. The systems may include a dilution gas source coupled with each exhaust line. The systems may include a mass flow controller coupled between the dilution gas source and each exhaust line. The systems may include a temperature sensor coupled with each exhaust line between the pump and the abatement system. The temperature sensor may be communicatively coupled with the controller of the gas source, which may control flow of a gas to a chamber based on a measurement from the temperature sensor.

Interlock system for processing chamber exhaust assembly

Disclosed herein are a plasma source, an abatement unit, and a method for detecting a coolant leak. The plasma source includes an RF generation system coupled with a cooling system. The RF generation system includes one or more electrical components comprising a hollow RF antenna for generating a plasma. The cooling system includes a coolant channel extending through the plasma source, including the electrical components of the RF generation system; a first flow control device coupled to the coolant channel to control a flow of the coolant into the coolant channel and electrically isolated from the hollow antenna; a second flow control device coupled to the coolant channel to control a flow of the coolant out of the coolant channel; and a pressure measurement device coupled with the coolant channel to measure a pressure level of the coolant. The coolant channel includes the hollow RF antenna.

Plasma source with a coolant leakage detection system

A system and method for controlling pressure in a foreline of a processing system are disclosed herein that reduce variation in foreline pressure. In one example, a processing system is provided that includes a first process chamber, a first pump, a foreline, and a first foreline pressure control system. The first pump has an inlet and an outlet. The inlet of the first pump coupled to an exhaust port of the first process chamber. The foreline is coupled to the outlet of the first pump. The first foreline pressure control system is fluidly coupled to the foreline downstream of the first pump. The first foreline pressure control system is operable to control a pressure in the foreline independent from operation of the first pump.

System and method for controlling foreline pressure

The present disclosure relates to systems and methods for detecting anomalies in a semiconductor processing system. According to certain embodiments, one or more external sensors are mounted to a sub-fab component, communicating with the processing system via a communication channel different than a communication channel utilized by the sub-fab component and providing extrinsic sensor data that the sub-fab component is not configured to provide. The extrinsic sensor data may be combined with sensor data from a processing tool of the system and/or intrinsic sensor data of the sub-fab component to form virtual sensor data. In the event the virtual data exceeds or falls below a threshold, an intervention or a maintenance signal is dispatched, and in certain embodiments, an intervention or maintenance action is taken by the system.

Method and system for detecting anomalies in a semiconductor processing system

Embodiments disclosed herein include an abatement system for abating compounds produced in semiconductor processes. The abatement system includes an exhaust cooling apparatus located downstream of a plasma source. The exhaust cooling apparatus includes a plate and a cooling plate disposed downstream of the plate. During operation, materials collected on the plate react with cleaning radicals to form a gas. The temperature of the plate is higher than the temperature of the cooling plate in order to improve the reaction rate of the reaction of the cleaning radicals and the materials on the plate.

Apparatus for collection and subsequent reaction of liquid and solid effluent into gaseous effluent

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San Jose, CA, United States of America

Ryan T Downey