Globalfoundries Singapore Pte. Ltd.

Ryan Shan

Manjunatha Govinda Prabhu

Mahadeva Iyer Natarajan

Da-Wei Lai

Protecting a gate dielectric is achieved with a gate dielectric protection circuit coupled to a transistor at risk. The protection circuit is activated to reduce the voltage across the gate dielectric (V) to below its breakdown voltage (V). The protection circuit is activated when an ESD event is detected. The protection circuit provides a protection or ESD bias to reduce Vbelow V.

Gate dielectric protection

A device having an ESD module is disclosed. The ESD module includes an ESD circuit coupled between first and second rails and a control circuit coupled between the rails and to the ESD circuit. When the control circuit senses an ESD event, it causes the ESD circuit to create a current path between the rails to dissipate ESD current. When no ESD event is sensed, the control circuit ensures that no current path is created between the rails to prevent latch-up.

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Singapore, Singapore

Ryan Shan