Optical Communication Products, Inc.

University of California

Optical Communication Productions, Inc.

Ryan Likeke Naone

Leo M F Chirovsky

Andrew William Jackson

Stewart A Feld

David Kisker

Larry Allen Coldren

John Wasserbauer

Selectively oxidized vertical cavity lasers emitting at about 1290 nm using InGaAsN quantum wells that operate continuous wave below, at and above room temperature are reported. The lasers employ a semi-insulating GaAs substrate for reduced capacitance, high quality, low resistivity AlGaAs DBR mirror structures, and a strained active region based on InGaAsN. In addition, the design of the VCSEL reduces free carrier absorption of 1.3 &#x3bc;m light in the p-type materials by placing relatively higher p-type dopant concentrations near standing wave nulls.

Long wavelength vertical cavity surface emitting laser

A method of forming a vertical cavity surface emitting laser () includes process steps for self-aligning the p-type ohmic contact (), an oxide current aperture (), and a central puck of re-phase material () around the optical axis of the laser.

Method of self-aligning an oxide aperture with an annular intra-cavity contact in a long wavelength VCSEL

An optoelectronic device having one or more DBR mirrors having a low voltage drop across the mirror layers and a high reflectivity for emission at a nominal wavelength of 1300 nm below, at and above room temperature. The low resistance DBR may be used as a top output mirror of a tunnel junction VCSEL that reduces resistance and optical losses by reducing the amount of p-type material within the device.

Low electrical resistance n-type mirror for optoelectronic devices

A method of forming a vertical cavity surface emitting laser ( ) includes process steps for self-aligning the p-type ohmic contact ( ), an oxide current aperture ( ), and a central puck of re-phase material ( ) around the optical axis of the laser.

A low thermal impedance optoelectronic device includes an optical cavity adjacent a low thermal impedance DBR that provides improved heat dissipation and temperature performance. The thermal impedance of the DBR may be reduced by increasing the relative or absolute thickness of a layer of high thermal conductivity material relative to a layer of low thermal conductivity material for at least a portion of the mirror periods. The thermal impedance may also be reduced by increasing the distance between phonon scattering surfaces by increasing the thickness of the high thermal conductivity layer, the low thermal conductivity layer or both.

Low thermal impedance DBR for optoelectronic devices

A process for forming a Vertical Cavity Laser (VCL) structure that includes using an intermixing technique involving an high temperature annealing operation to overcome lateral carrier diffusion away from the center of the active region of the VCL. Degrading effects of the high temperature annealing are avoided by first restricting the dopant associated with the p-type Bragg reflector (DBR) region of the VCL to low diffusivity types such as carbon, thus eliminating a thermally-induced diffusion that occurs when other p-type dopants such as beryllium (Be), Zinc (Zn), or Magnesium (Mg) are employed. Further, the oxide created to act as an aperture in a conventional VCL structure is removed leaving behind an air gap having the shape of the oxide aperture. It was found that the degrading effects associated with annealing the VCL structure were minimized using carbon as the p-type dopant and air gap apertures. In addition, it was determined that the annealed, air gap apertured, VCL provided the same optical loss properties previously attributed only to an un-annealed, oxide-apertured, VCL&mdash;but without sacrificing efficiency due to lateral carrier diffusion.

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Boulder, CO, United States of America

Ryan Likeke Naone