Tpo Displays Corporation

Chimei Innolux Corporation

Ryan Lee

Hanson Liu

Yoshihiro Morimoto

Shih-Chang Chang

Yaw-Ming Tsai

Hsiang-Lun Hsu

Chun-Hsiang Fang

Fengyi Chen

Yu-Ting Hung

Feng-Yi Chen

The invention discloses an organic electroluminescent device includes a substrate. The substrate includes a first control area and a second control area, a polysilicon active layer disposed on the first control area, and a first conductivity type source/drain area disposed in the polysilicon active layer. A first dielectric layer is disposed on the polysilicon active layer serving as a first gate dielectric layer, a first gate and a second gate is disposed on the polysilicon active layer and the second control area, respectively, wherein the first gate and the first conductivity type source/drain area constitute a first conductivity type thin film transistor serving as a switch element. A second dielectric layer disposed on the first gate and the second gate serves as a second gate dielectric layer, a micro-crystal silicon active layer disposed over the second gate.

Organic electroluminescent device and fabrication method thereof

A system for displaying images is disclosed. The system includes a self-emitting display device including an array substrate having a pixel region. A light-emitting diode is disposed on the array substrate of the pixel region. First and second driving thin film transistors are electrically connected to a light-emitting diode. The first driving thin film transistor includes a first gate and an active layer stacked on the array substrate of the pixel region and the second driving thin film transistor includes the active layer and a second gate thereon. The first gate is coupled to a first voltage and the second gate is coupled to a second voltage different from the first voltage during the same frame.

System for displaying images

A system for displaying images. The system comprises a thin film transistor (TFT) device comprising a substrate having a pixel region. An active layer is disposed on the substrate of the pixel region, comprising a channel region, a pair of source/drain regions separated by the channel region. The channel region comprises dopants with a first conductivity type and a second conductivity type opposite to the first conductivity type. A gate structure is disposed on the active layer, comprising a stack of a gate dielectric layer and a gate layer. A method for fabricating a system for displaying images including the TFT device is also disclosed.

System for displaying images including thin film transistor device and method for fabricating the same

An image display system has a multi-gate thin film transistor (TFT) disposed on a transparent substrate. The multi-gate TFT includes a silicon film layer, a first electrode and a reflecting layer. The silicon film layer is formed on the transparent substrate and has a first crystallization zone and a second crystallization zone, which are not adjacent to each other. A grain size of the first crystallization zone is smaller than a grain size of the second crystallization zone. The first electrode corresponding to the first crystallization zone is disposed on the silicon film layer. The reflecting layer corresponding to the second crystallization zone is disposed on the transparent substrate. The silicon film layer is disposed on the transparent substrate and the reflecting layer.

Multi-gate thin film transistor having recrystallized channel regions with different grain sizes

A system for displaying images comprises a thin film transistor (TFT) device comprising first and second active layers disposed on a substrate in the driving circuit region and in the pixel region, respectively. Each active layer comprises a channel region, a source/drain region and a lightly doped region formed therebetween. Two gate structures are disposed on the first and second active layers, respectively. Each gate structure comprises a stacked first and second gate dielectric layers and a gate layer, and the second gate dielectric layer has a length shorter than that of the first gate dielectric layer but longer than the gate length of the gate layer. The lightly doped region of the first active layer has a length different from that of the second active layer.

Display with thin film transistor devices having different electrical characteristics in pixel and driving regions

A method and an apparatus for forming a polycrystalline layer using laser annealing for preventing damage to the peripheral region of the substrate during laser annealing. The laser annealing comprises a shadow mask structure. When crystallizing an amorphous layer by laser annealing, the shadow mask structure shields the peripheral region of the amorphous layer from laser irradiation. A method for forming a polycrystalline layer using the laser annealing apparatus is also provided in the invention.

Method and apparatus for forming polycrystalline layer using laser crystallization

Systems for displaying images and fabrication method thereof are provided. A representative system incorporates an active matrix organic electroluminescent device that includes pixel areas, a pair of spaced pixel definition layers surrounding each pixel area, and a reflective layer formed on the surface of the pixel definition layers. Particularly, the pair of spaced pixel definition layers is separated by a trench, and the reflective layer covers the sidewalls and bottom of the trench.

Growing community of inventors

Hualien, Taiwan

Ryan Lee