Semiconductor Components Industries, LLC

Ryan J Hurley

Sudhama C Shastri

Yenting Wen

Mark A Thomas

David M Heminger

Phillip Holland

Rong Liu

Earl D Fuchs

Wenjiang Zeng

Der Min Liou

Emily M Linehan

Li Jiang

Wang-Chang Albert Gu

A semiconductor component and methods for manufacturing the semiconductor component that includes a monolithically integrated common mode choke. In accordance with embodiments, a transient voltage suppression device may be coupled to the monolithically integrated common mode choke.

Method for manufacturing a semiconductor component that includes a common mode choke and structure

In one embodiment, a filter structure that integrates one plate of a capacitor with an electrode of a transient voltage device. The filter structure includes a well region of one conductivity type formed in semiconductor substrate of an opposite conductivity type. The well region forms one plate of the capacitor and an electrode of the transient voltage suppression device. A dielectric layer is formed over a portion of the well region and a conductive layer is formed overlying the dielectric layer to provide a second plate of the capacitor. The dopant concentration of the well region provides a constant capacitance/voltage characteristic for the filter structure when a selected voltage range is applied to plates of the capacitor.

Filter having integrated floating capacitor and transient voltage suppression structure and method of manufacture

In one embodiment, a split well region of one conductivity type is formed in semiconductor substrate of an opposite conductivity type. The split well region forms one plate of a floating capacitor and an electrode of a transient voltage suppression device.

Semiconductor filter structure and method of manufacture

In one embodiment, a multi-layer inductor is formed overlying a semiconductor substrate.

Integrated semiconductor inductor and method therefor

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Gilbert, AZ, United States of America

Ryan J Hurley