Applied Materials, Inc.

Ryan Hanson

Vivek G Gupta

Keith A Miller

Zhenbin Ge

Vijay D Parkhe

Muhammad M Rasheed

Goichi Yoshidome

Srinivas Gandikota

John C Forster

Xianmin Tang

Kirankumar Neelasandra Savandaiah

Rongjun Wang

Tza-Jing Gung

Adolph Miller Allen

Alan A Ritchie

Jianxin Lei

Manjunatha P Koppa

Thanh X Nguyen

Xianwei Zhao

Donny Young

Nelson A Yee

Sally Lou

Ruxiao An

Embodiments of process kit shields and process chambers incorporating same are provided herein. In some embodiments, a one-piece process kit shield includes a cylindrical body having an upper portion and a lower portion; a heat transfer channel extending through the upper portion; and a cover ring section extending radially inward from the lower portion.

One-piece process kit shield

In some embodiments a method of depositing a metal-containing layer atop a substrate disposed in a physical vapor deposition (PVD) chamber includes: providing a plasma forming gas to a processing region of the PVD chamber; providing a first amount of RF power to a target assembly disposed opposite the substrate to form a plasma within the processing region of the PVD chamber; sputtering source material from the target assembly to deposit a metal-containing layer onto the substrate, wherein the source material is at a first erosion state; and tuning an auto capacitance tuner coupled to a substrate support while sputtering source material to maintain an ion energy at a surface of the substrate within a predetermined range as the target erodes from the first erosion state to a second erosion state.

Auto capacitance tuner current compensation to control one or more film properties through target life

Target profile for a physical vapor deposition chamber target

An electrostatic chuck includes a puck having a support surface to support a substrate when disposed thereon and an opposing second surface, wherein one or more chucking electrodes are embedded in the puck, a body having a support surface coupled to the second surface of the puck to support the puck, a DC voltage sensing circuit disposed on support surface of the puck, and an inductor disposed in the body and proximate the support surface of the body, wherein the inductor is electrically coupled to DC voltage sensing circuit, and wherein the inductor is configured to filter high frequency current flow in order to accurately measure DC potential on the substrate.

Electrostatic chuck design for high temperature RF applications

Methods and apparatus for a magnetron assembly are provided herein. In some embodiments, a magnetron assembly includes a first base plate; a second base plate movable with respect to the first base plate between a first position and a second position; an outer magnetic pole in the shape of a loop and comprising an outer magnetic pole section coupled to the first base plate and an outer magnetic pole section coupled to the second base plate; and an inner magnetic pole disposed within the outer magnetic pole, wherein the outer and inner magnetic poles define a closed loop magnetic field, and wherein the closed loop magnetic field is maintained when the second base plate is disposed in both the first position and a second position.

Configurable variable position closed track magnetron

A process shield may include an elongated annular body having an outer surface and an inner surface; a lip extending radially outward from the outer surface of the body proximate a first end of the body such that a first portion of the body extends beyond the lip toward the first end; a plurality of openings in the lip; and a pin disposed in each of the plurality of openings to align the target assembly atop the process shield when the lid is placed atop the process shield, wherein the pin comprises an elongated body having a first surface with a beveled peripheral edge, wherein the first surface has a first diameter, a second surface opposing the first surface, wherein the second surface has a second diameter, and a sidewall, between the first surface and the second surface, wherein the sidewall has a concave portion having a third diameter.

Self-centering process shield

In some embodiments, a target assembly, for use in a substrate processing chamber having a process shield, may include a backing plate having a first side and an opposing second side, wherein the second side comprises a first surface having a first diameter bounded by a first edge; a target material having a first side bonded to the first surface of the backing plate; wherein the first edge is an interface between the backing plate and the target material; a plurality of slots disposed along an outer periphery of the backing plate extending from the first side of the backing plate toward the second side of the backing plate, wherein the plurality of slots are configured to align the target assembly with respect to the process shield.

PVD target for self-centering process shield

Embodiments of substrate supports having a radio frequency (RF) return path are provided herein. In some embodiments, a substrate support may include a dielectric support body having a support surface to support a substrate thereon and an opposing second surface; a chucking electrode disposed within the support body proximate the support surface; and an RF return path electrode disposed on the second surface of the dielectric support body. In some embodiments, a substrate processing system may include a process chamber having an inner volume; a shield to separate the inner volume into a processing volume and a non-processing volume and extending toward a ceiling of the process chamber; and a substrate support disposed below the shield, wherein the substrate support is as described above.

Substrate support with radio frequency (RF) return path

Methods and apparatus to improve target life and deposition uniformity in PVD chambers are provided herein. In some embodiments, a magnetron assembly includes a shunt plate having a central axis, the shunt plate rotatable about the central axis, a first open loop magnetic pole arc coupled to the shunt plate at a first radius from the central axis, and a second open loop magnetic pole arc coupled the shunt plate at a first distance from the first open loop magnetic pole arc, wherein at least one of the first radius varies along the first open loop magnetic pole arc or the first distance varies along the second open loop magnetic pole arc. In some embodiments, a first polarity of the first open loop magnetic pole arc opposes a second polarity of the second open loop magnetic pole arc.

Magnetron design for RF/DC physical vapor deposition

Growing community of inventors

Cupertino, CA, United States of America

Ryan Hanson