Ushio Denki Kabushiki Kaisha

Kyoto University

Ryan Ganipan Banal

Yoichi Kawakami

Hiroshige Hata

Masanori Yamaguchi

Mitsuru Funato

Ken Kataoka

Takao Oto

Provided is a compact ultraviolet irradiation apparatus which is capable of emitting ultraviolet radiation with high efficiency. This ultraviolet irradiation apparatus includes, in a vessel, a semiconductor multi-layered film element and an electron beam irradiation source for irradiating the semiconductor multi-layered film element with an electron beam, the vessel being hermetically sealed to have a negative internal pressure and having an ultraviolet transmitting window. Furthermore, the semiconductor multi-layered film element includes an active layer having a single quantum well structure or a multi quantum well structure of InAlGaN (0&#x2266;x&#x3c;1, 0&#x3c;y&#x2266;1, x+y&#x2266;1), and the active layer of the semiconductor multi-layered film element is irradiated with an electron beam from the electron beam irradiation source. This allows the semiconductor multi-layered film element to emit ultraviolet radiation out of the vessel through the ultraviolet transmitting window. Furthermore, Equation (1) below is satisfied,4.18&#xd7;10.6&#xd7;&#x2003;&#x2003;Equation (1)where V (kV) is the acceleration voltage of the electron beam and t (nm) is the thickness of the active layer.

Ultraviolet irradiation apparatus

Growing community of inventors

Kyoto, Japan

Ryan Ganipan Banal