Asml Netherlands B.v.

Nederlandse Organisatie Voor Toegepast-natuurwetenschappelijk Onderzoek Tno

Ruud Olieslagers

Cornelius Maria Rops

Erik Henricus Egidius Catharina Eummelen

Giovanni Luca Gattobigio

Theodorus Wilhelmus Polet

Han Henricus Aldegonda Lempens

Miao Yu

Johannes Cornelis Paulus Melman

Patrick Johannes Wilhelmus Spruytenburg

Artunç Ulucan

Gerben Pieterse

Freddy Roozeboom

Ronald Van Der Ham

Hubert Marie Segers

Aart Adrianus Van Beuzekom

Jozef Augustinus Maria Alberti

Pepijn Van Den Eijnden

Francis Fahrni

Paul Van Dongen

Raymond Jacobus Wilhelmus Knaapen

Bas Willems

Matijs C Van Den Boer

Dennis Van Den Berg

Laurentius Johannes Adrianus Van Bokhoven

Jacques Cor Johan Van Der Donck

Diederik Jan Maas

Jeroen Anthonius Smeltink

Jeroen Arjan Van Herp

A fluid handling structure for a gas phase deposition apparatus, the structure defining a flow path with an inlet and an outlet for transmitting pressurized fluid from said inlet to the outlet, wherein the structure includes an elongated slit and a series of nozzles through which pressurized fluid is allowed to enter the elongated slit, the inlet being upstream the series of nozzles, and wherein the outlet is formed downstream at a gap opening of the elongated slit allowing pressurized fluid to discharge from the elongated slit towards a substrate, wherein the series of nozzles are configured to provide a larger flow resistance than the elongated slit, and wherein the series of nozzles are adapted to form a series of jet flows directed towards one or more impingement surfaces of the structure when pressurized fluid is transmitted through the flow path.

Fluid handling structure and method for a gas phase deposition apparatus

An immersion lithographic apparatus having a fluid handling structure, the fluid handling structure configured to confine immersion fluid to a region and including: a meniscus controlling feature having an extractor exit on a surface of the fluid handling structure; and a gas knife system outwards of the extractor exit and including passages each having an exit, the passages having a plurality of first passages having a plurality of corresponding first exits on the surface, and a plurality of second passages having a plurality of corresponding second exits outwards of the first exits on the surface, wherein the surface faces and is substantially parallel to a top surface of a substrate during exposure, and the first exits and the second exits are arranged at a greater distance from the substrate than the extractor exit.

Fluid handling structure and lithographic apparatus

Method of performing atomic layer deposition. The method comprises supplying a precursor gas towards a substrate, using a deposition head including one or more gas supplies, including a precursor gas supply. The precursor gas reacts near a surface of the substrate for forming an atomic layer. The deposition head has an output face comprising the gas supplies, which at least partly faces the substrate surface during depositing the atomic layer. The output face has a substantially rounded shape defining a movement path of the substrate. The precursor-gas supply is moved relative to the substrate by rotating the deposition head while supplying the precursor gas, for depositing a stack of atomic layers while continuously moving in one direction. The surface of the substrate is kept contactless with the output face by means of a gas bearing.

Method and apparatus for depositing atomic layers on a substrate

A lithographic apparatus includes a substrate table, a post-exposure handling module, a substrate handling robot and a drying station. The substrate table is configured to support a substrate for an exposure process. The post-exposure handling module is configured to handle the substrate post-exposure. The substrate handling robot is configured to transfer the substrate from the substrate table along a substrate unloading path into the post-exposure handling module. The drying station is configured to actively remove liquid from a surface of the substrate. The drying station is located in the substrate unloading path. The drying station is located in the post-exposure handling module. The post-exposure handling module may be a substrate handler.

Lithographic apparatus, method of transferring a substrate and device manufacturing method

A lithographic apparatus including a projection system configured to project a patterned radiation beam onto a substrate and a fluid confinement structure configured to confine immersion fluid in a localized region between a final element of the projection system and a surface of the substrate. The lithographic apparatus is configured to have a space bounded on one side by a surface of the projection system and/or a component of the lithographic apparatus at least partially surrounding the final element of the projection system, and on the other side by a surface of the fluid confinement structure. The apparatus is configured to increase the humidity of the gas within the space.

Lithographic apparatus and a method of manufacturing a device using a lithographic apparatus

Method of depositing an atomic layer on a substrate. The method comprises supplying a precursor gas from a precursor-gas supply of a deposition head that may be part of a rotatable drum. The precursor gas is provided from the precursor-gas supply towards the substrate. The method further comprises moving the precursor-gas supply by rotating the deposition head along the substrate which in its turn is moved along the rotating drum. The method further comprises switching between supplying the precursor gas from the precursor-gas supply towards the substrate over a first part of the rotation trajectory; and interrupting supplying the precursor gas from the precursor-gas supply over a second part of the rotation trajectory.

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Geldrop, Netherlands

Ruud Olieslagers