Micron Technology Incorporated

Rutuparna Narulkar

Matthew J King

Jivaan Kishore Jhothiraman

Lifang Xu

Kunal Shrotri

Suresh Ramarajan

Gowrisankar Damarla

Sri Sai Sivakumar Vegunta

Rithu K Bhonsle

John B Matovu

David S Meyaard

Kevin R Gast

Shashank Saraf

Fei Wang

Matthew Park

Jun Fang

Saniya Rathod

Chandra S Tiwari

A semiconductor device structure that comprises tiers of alternating dielectric levels and conductive levels and a carbon-doped silicon nitride over the tiers of the staircase structure. The carbon-doped silicon nitride excludes silicon carbon nitride. A method of forming the semiconductor device structure comprises forming stairs in a staircase structure comprising alternating dielectric levels and conductive levels. A carbon-doped silicon nitride is formed over the stairs, an oxide material is formed over the carbon-doped silicon nitride, and openings are formed in the oxide material. The openings extend to the carbon-doped silicon nitride. The carbon-doped silicon nitride is removed to extend the openings into the conductive levels of the staircase structure. Additional methods are disclosed.

Semiconductor devices comprising carbon-doped silicon nitride and related methods

An electronic device includes a stack structure, the stack structure including at least one deck including tiers of vertically alternating dielectric materials and conductive materials, an opening extending through the at least one deck, a compressive dielectric material disposed on a bottom surface defining the opening and on sidewalls of the tiers defining the opening, and a dielectric material in direct contact with the compressive dielectric material. The dielectric material substantially fills a remainder of the opening. The compressive dielectric material exhibits a horizontal compressive force against the tiers. Related methods and systems are also disclosed.

Electronic devices comprising a compressive dielectric material, and related systems and methods

A method of forming a semiconductor structure includes forming a sacrificial material over a stack comprising alternating levels of a dielectric material and another material, forming an opening through the sacrificial material and at least some of the alternating levels of the dielectric material and the another material, forming at least one oxide material in the opening and overlying surfaces of the sacrificial material, an uppermost surface of the at least one oxide material extending more distal from a surface of a substrate than an uppermost level of the dielectric material and the another material, planarizing at least a portion of the at least one oxide material to expose a portion of the sacrificial material, and removing the sacrificial material while the uppermost surface of the at least one oxide material remains more distal from the surface of the substrate than the uppermost level of the alternating levels of the dielectric material and the another material. Related methods of forming semiconductor structures and related semiconductor devices are disclosed.

Stair step structures including insulative materials, and related devices

Semiconductor devices including a stair step structure, and related methods

Methods of forming semiconductor structures having stair step structures

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Boise, ID, United States of America

Rutuparna Narulkar