Helmholtz-Zentrum Berlin Fuer Materialien Und Energie Gmbh

Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh

Rutger Schlatmann

Sven Ring

Sascha Hoch

Simon Kirner

Artjom Maljusch

Sebastian Fiechter

Stefan Gall

Holger Rhein

Christof Schultz

Frank Fink

Moshe Weizman

Bernd Stannowski

Ines Elkemann

Patrick Borowski

A method for producing a rear-side contact system for a silicon thin-film solar cell having a pn junction formed from a silicon absorber layer and an emitter layer includes applying an organic insulation layer to the emitter layer; producing contact holes in the insulation layer as far as the absorber layer and the emitter layer; subsequently insulating the contact holes; subsequently applying a low-melting metal layer to form n and p contacts in the contact holes; separating the metal layer into n-contacting and p-contacting regions by laser-cutting; before applying the organic insulation layer to the emitter layer, applying a TCO layer; producing holes for contacts for the silicon absorber layer in the organic insulation; and subsequently selectively doping the produced holes for the contacts as far as the silicon absorber layer.

Method for producing a rear-side contact system for a silicon thin-layer solar cell

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Berlin, Germany

Rutger Schlatmann