Ds Smith Plc

Infineon Technologies Americas Corp.

Russell Turner

Rajeev Krishna Vytla

Luther-King Ngwendson

Stephen James Pointon

Nicholas Limburn

A blank is provided which has a chassis of corrugated cardboard where a series of a quadrangular closure flap, a quadrangular cover panel, a first quadrangular lateral panel, a quadrangular bottom panel and a second quadrangular lateral panel are individuated by crease lines. Each panel is provided with left and right quadrangular flaps, respectively. The blank has four compression members of corrugated cardboard glued to an internal face of the chassis in correspondence of areas bordering the first and second quadrangular panels and the respective left and right quadrangular flaps. A box obtainable from the blank by folding is also provided.

Blank and box obtainable therefrom

A method for customizing a blank of sheet material delimited by first and second opposite sides and third and fourth opposite sides orthogonal to the first and second sides involves doing, on a face of the blank, a first couple of first and second wave-shaped crease lines and a second couple of third and fourth wave-shaped crease lines, each wave-shaped crease line being crossed by straight crease tracts, so that the third side, the first, second, third and fourth wave-shaped crease lines and fourth side delimit in succession a first top panel, a first side panel, a bottom panel, a second side panel and a second top panel, doing first and second continuous straight crease lines parallel to each other and to the straight crease tracts and delimiting respective back and front wings of each of the first top panel, first side panel, bottom panel, second side panel and second top panel. Glue is transversally applied to the straight crease lines.

Method for customizing a blank, and the resulting blank

An edge termination structure is disclosed. The edge termination structure includes an active cell in a semiconductor wafer, an edge termination region adjacent the active cell in the semiconductor wafer, where the edge termination region includes a recessed field oxide region and a termination charge region below the recessed field oxide region. The recessed field oxide region may be thermally grown in a recess in the semiconductor wafer. A top surface of the recessed field oxide region is substantially coplanar with a top surface of the semiconductor wafer. The active cell may include at least one insulated-gate bipolar transistor surrounded by the edge termination region in the semiconductor wafer. The termination charge region has a conductivity type opposite of that of the semiconductor wafer. The termination charge region is adjacent to at least one guard ring in the semiconductor wafer.

Growing community of inventors

Monmouth, United Kingdom

Russell Turner