Nxp Usa, Inc.

Russell Schaller

Ronghua Zhu

Pierre Turpin

Maarten Jacobus Swanenberg

Matthew Bacchi

Keith Jackoski

Laurent Segarra

A testing method and apparatus is disclosed for testing an integrated circuit device () which has a dedicated ground bias pad () connected across a high voltage electrostatic discharge clamp circuit () to a well-driving ground pad () by applying a first voltage to the dedicated ground bias pad to bias a wafer substrate () while simultaneously applying a second voltage to the well-driving ground pad to bias the well region (), where the first and second voltage create a stressing voltage across a buried insulator layer () in the integrated circuit device so that a screening test can be conducted to screen for a defect () in the buried insulator layer by measuring a leakage current.

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Gilbert, AZ, United States of America

Russell Schaller