Carnegie Institution of Washington

The Uab Research Foundation

Russell J Hemley

Ho-Kwang Mao

Chih-Shiue Yan

Yogesh K Vohra

Wei Li

Yu-fei Meng

Qi Liang

David M Teter

The invention relates to single crystal diamond with high optical quality and methods of making the same. The diamond possesses an intensity ratio of the second-order Raman peak to the fluorescence background of around 5 or greater.

Production of large, high purity single crystal CVD diamond

The invention relates to a single crystal boron doped CVD diamond that has a toughness of at least about 22 MPa m. The invention further relates to a method of manufacturing single crystal boron doped CVD diamond. The growth rate of the diamond can be from about 20-100 &#x3bc;m/h.

Ultratough single crystal boron-doped diamond

The present invention is directed to new laser-related uses for single-crystal diamonds produced by chemical vapor deposition. One such use is as a heat sink for a laser; another such use is as a frequency converter. The invention is also directed to a &#x3c7;nonlinear crystalline material for Raman laser converters comprising single crystal diamond.

Laser uses for single-crystal CVD diamond

The present invention relates to a method for producing colorless, single-crystal diamonds at a rapid growth rate. The method for diamond production includes controlling temperature of a growth surface of the diamond such that all temperature gradients across the growth surface of the diamond are less than about 20&#xb0; C., and growing single-crystal diamond by microwave plasma chemical vapor deposition on the growth surface of a diamond at a growth temperature in a deposition chamber having an atmosphere, wherein the atmosphere comprises from about 8% to about 20% CHper unit of Hand from about 5 to about 25% Oper unit of CH. The method of the invention can produce diamonds larger than 10 carats. Growth rates using the method of the invention can be greater than 50 &#x3bc;m/hour.

Colorless single-crystal CVD diamond at rapid growth rate

The present invention is directed to new uses and applications for colorless, single-crystal diamonds produced at a rapid growth rate. The present invention is also directed to methods for producing single crystal diamonds of varying color at a rapid growth rate and new uses and applications for such single-crystal, colored diamonds.

Diamond uses/applications based on single-crystal CVD diamond produced at rapid growth rate

A single crystal diamond grown by microwave plasma chemical vapor deposition annealed at pressures in excess of 4.0 GPa and heated to temperature in excess of 1500 degrees C. that has a hardness of greater than 120 GPa. A method for manufacture a hard single crystal diamond includes growing a single crystal diamond and annealing the single crystal diamond at pressures in excess of 4.0 GPa and a temperature in excess of 1500 degrees C. to have a hardness in excess of 120 GPa.

Ultrahard diamonds and method of making thereof

A single crystal diamond grown by microwave plasma chemical vapor deposition has a hardness of 50-90 GPa and a fracture toughness of 11-20 MPa m. A method for growing a single crystal diamond includes placing a seed diamond in a holder; and growing single crystal diamond at a temperature of about 1000&#xb0; C. to about 1100&#xb0; C. such that the single crystal diamond has a fracture toughness of 11-20 MPa m.

Tough diamonds and method of making thereof

Single crystal CVD diamond is heated to temperatures of 1500&#xb0; C. to 2900&#xb0; C. under a pressure that prevents significant graphitization. The result is a CVD diamond with improved optical properties.

Method of making enhanced CVD diamond

The invention relates to a single-crystal diamond grown by microwave plasma chemical vapor deposition that has a toughness of at least about 30 MPa m. The invention also relates to a method of producing a single-crystal diamond with a toughness of at least about 30 MPa m. The invention further relates to a process for producing a single crystal CVD diamond in three dimensions on a single crystal diamond substrate.

Ultratough CVD single crystal diamond and three dimensional growth thereof

An apparatus for producing diamond in a deposition chamber including a heat-sinking holder for holding a diamond and for making thermal contact with a side surface of the diamond adjacent to an edge of a growth surface of the diamond, a noncontact temperature measurement device positioned to measure temperature of the diamond across the growth surface of the diamond and a main process controller for receiving a temperature measurement from the noncontact temperature measurement device and controlling temperature of the growth surface such that all temperature gradients across the growth surface are less than 20&#xb0; C. The method for producing diamond includes positioning diamond in a holder such that a thermal contact is made with a side surface of the diamond adjacent to an edge of a growth surface of the diamond, measuring temperature of the growth surface of the diamond to generate temperature measurements, controlling temperature of the growth surface based upon the temperature measurements, and growing single-crystal diamond by microwave plasma chemical vapor deposition on the growth surface, wherein a growth rate of the diamond is greater than 1 micrometer per hour.

Apparatus and method for diamond production

A single crystal diamond grown by microwave plasma chemical vapor deposition has a hardness of 50&#x2013;90 GPa and a fracture toughness of 11&#x2013;20 MPa m. A method for growing a single crystal diamond includes placing a seed diamond in a holder; and growing single crystal diamond at a temperature of about 1000&#xb0; C. to about 1100&#xb0; C. such that the single crystal diamond has a fracture toughness of 11&#x2013;20 MPa m.

Growing community of inventors

Chevy Chase, MD, United States of America

Russell J Hemley