Texas Instruments Corporation

Russell Duane Fields

Bhaskar Srinivasan

Scott William Jessen

Guruvayurappan Mathur

Poornika Fernandes

Shih Chang Chang

David Matthew Curran

Thomas Terrance Lynch

Stephen Arlon Meisner

Rajesh Tiwari

Stephen Arion Meisner

Andrew Tae Kim

Scott A Boddicker

In some examples, an integrated circuit comprises a substrate; a first metal layer and a second metal layer positioned above the substrate; a first composite dielectric layer located on the first metal layer, wherein the first composite dielectric layer comprises a first anti-reflective coating; a second composite dielectric layer positioned on the second metal layer, wherein the second composite dielectric layer comprises a second anti-reflective coating; and a capacitor metal layer disposed over the first composite dielectric layer.

Integrated circuits having dielectric layers including an anti-reflective coating

A trench is formed in a low K dielectric () over a plurality of vias () also formed in the low K dielectric layer (). The vias are separated by a distance of less than Xand the edge of the trench is greater than Xfrom the edge &#x3b1; of the via closest to the edge of the trench. The trench and vias are subsequently filled with copper (), () to form the interconnect line.

Dual depth trench termination method for improving Cu-based interconnect integrity

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Richardson, TX, United States of America

Russell Duane Fields