Applied Materials, Inc.

Russell Chin Yee Teo

Benjamin Colombeau

Ludovic Godet

Anchuan Wang

Robert Jan Visser

Karthik Janakiraman

Rui Cheng

Regina Germanie Freed

Zihui Li

Takehito Koshizawa

Krishna Nittala

Madhur Sachan

Chia-Ling Kao

Xiawan Yang

Nir Yahav

Ming-Yuan Chuang

Susumu Shinohara

Juan Guo

Qu Jin

Menghui Li

Exemplary processing methods may include depositing a boron-containing material or a silicon-and-boron-containing material on a substrate disposed within a processing region of a semiconductor processing chamber. The methods may include etching portions of the boron-containing material or the silicon-and-boron-containing material with a chlorine-containing precursor to form one or more features in the substrate. The methods may also include removing remaining portions of the boron-containing material or the silicon-and-boron-containing material from the substrate with a fluorine-containing precursor.

Integration processes utilizing boron-doped silicon materials

An electro-optical waveguide modulator device includes a seed layer on a substrate, the seed layer having a first crystallographic plane aligned with a surface of the seed layer, an electro-optical channel extending in a first direction on the seed layer and having a second crystallographic plane aligned with the surface of the seed layer, an insulator layer on both sides of the electro-optical channel on the substrate in a second direction perpendicular to the first direction, an electrode barrier layer on the electro-optical channel and the insulator layer, and one or more of electrodes extending in the second direction. The seed layer and the insulator layer each comprise material having a refractive index that is lower than the electro-optical channel.

Thin-film electro-optical waveguide modulator device

Electronic devices and methods of forming electronic devices using a reduced number of hardmask materials and reusing lithography reticles are described. Patterned substrates are formed using a combination of etch selective hardmask materials and reusing reticles to provide a pattern of repeating trapezoidal and rhomboidal openings.

Electronic device having self-aligned contacts

Methods of forming self-aligned contacts comprising reusing hardmask materials and lithography reticles

Methods and apparatus for inspecting features on a substrate including exposing at least a portion of the substrate to a first electron beam landing energy to obtain a first image; exposing the at least a portion of the substrate to a second electron beam landing energy to obtain a second image, wherein the second electron beam landing energy is different from the first electron beam landing energy; realigning the first image and the second image to a feature on the substrate; and determining from at least one measurement from the first image associated with the feature and at least one measurement from the second image associated with the feature if the feature is leaning or twisting.

Methods and apparatus for performing profile metrology on semiconductor structures

Gate all-around devices are disclosed in which an angled channel comprising a semiconducting nanostructure is located between a source and a drain. The angled channel has an axis that is oriented at an angle to the top surface of the substrate at an angle in a range of about 1&#xb0; to less than about 90&#xb0;. The gate all-around device is intended to meet design and performance criteria for the 7 nm technology generation.

Gate all-around device

Gate all-around devices are disclosed in which an angled channel including a semiconducting nanostructure is located between a source and a drain. The angled channel has an axis that is oriented at an angle to the top surface of the substrate at an angle in a range of about 1&#xb0; to less than about 90&#xb0;. The gate all-around device is intended to meet design and performance criteria for the 7 nm technology generation.

Growing community of inventors

San Jose, CA, United States of America

Russell Chin Yee Teo