Intel Corporation

Altera Corporation

Rusli Kurniawan

Andy Louie Lee

Jeffrey T Watt

Yue-Song He

Richard G Smolen

Christopher J Pass

Alok Nandini Roy

Paul Yeh

Daren Linsenbach

Anwen Liu

Integrated circuits with an array of programmable resistive switch elements are provided. A programmable resistive switch element may include two non-volatile resistive memory elements connected in series and two varistors. A first of the two varistors is used to program a top resistive memory element in the resistive switch element, whereas a second of the two varistors is used to program a bottom resistive memory element in the resistive switch element. Row and column drivers implemented using only thin gate oxide transistors are used to program a selected resistive switch in the array without violating a maximum voltage level that satisfies predetermined defects per million (DPM) reliability criteria.

Methods and circuitry for programming non-volatile resistive switches using varistors

Integrated circuits with programmable resistive switch elements are provided. A programmable resistive switch element may include two non-volatile resistive elements connected in series and a programming transistor. The programmable resistive switch elements may be configured in a crossbar array and may be interposed within the user data path. Driver circuits may also be included for selectively turning on or turning off the switches by applying positive and optionally negative voltages.

Integrated circuits with programmable non-volatile resistive switch elements

Integrated circuits with memory elements are provided. A memory element may include non-volatile resistive elements coupled together in a back-to-back configuration or an in-line configuration. Erase, programming, and margining operations may be performed on the resistive elements. Each of the resistive memory elements may receive a positive voltage, a ground voltage, or a negative voltage on either the anode or cathode terminal.

Integrated circuits with complementary non-volatile resistive memory elements

A programmable logic device includes field programmable logic circuits and an internal programming circuit. The internal programming circuit includes a memory to store characterization data characterizing programmed voltage values of the field programmable logic circuits as a function of program voltage pulse widths. A characterization data processor programs the field programmable logic circuits using the characterization data.

Apparatus and method for in-system programming of a field programmable logic device using device-specific characterization data

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Belmont, CA, United States of America

Rusli Kurniawan