Other

Promos Technologies, Inc

Rurng-Chien Chang

Champion Yi

Jiun-Fang Wang

Feng-Yeu Shau

A method and apparatus for filtering a slurry used in a chemical mechanical polishing apparatus is disclosed. Magnets are provided along the piping network between a slurry reservoir and the CMP apparatus. A magnet may also be placed adjacent to the slurry reservoir to prevent iron oxide particles from traveling with the slurry to the CMP apparatus. The magnets attract iron oxide particles from the slurry and remove those particles from the slurry prior to polishing. This reduces the amount of defects caused by the iron oxide particles in the slurry.

Magnetic filtration for slurry used in chemical mechanical polishing of semiconductor wafers

A method for chemical mechanical polishing (CMP) of a wafer having a top layer to be polished is disclosed. The method comprises the steps of: using a CMP apparatus to polish the top layer using a first slurry having abrasive particles of a first size; and using the CMP apparatus to polish the top layer using a second slurry having abrasive particles of a second size, the second size being smaller than the first size.

Growing community of inventors

Kao-Hsiung, Taiwan

Rurng-Chien Chang