Siltronic Ag

Rupert Krautbauer

Martin Weber

Robert Vorbuchner

Erich Gmeilbauer

Christoph Frey

Rainer Winkler

Simon Zitzelsberger

Lothar Lehmann

Andrej Lenz

Erwin-Peter Mayer

Gerhard Huettl

A semiconductor wafer is formed of a substrate wafer of single crystal silicon doped with dopant atoms of the n type or p type, with a front surface and a back surface, contains a layer deposited epitaxially on the front surface of the substrate wafer. The substrate wafer additionally includes an nor pdoped layer, which extends from the front surface of the substrate wafer into the substrate wafer and has a defined thickness. The semiconductor wafer is produced by a process in which dopant atoms of the n type or p type are introduced into the substrate wafer through the front surface of the substrate wafer, the dopant concentration in a layer which extends from the front surface of the substrate wafer into the substrate wafer being increased from the level nor pto the level nor p, and an epitaxial layer is then deposited on this layer.

Semiconductor wafer with an epitaxially deposited layer, and process for producing the semiconductor wafer

The invention relates to a process for producing highly doped semiconductor wafers, in which at least two dopants which are electrically active and belong to the same group of the periodic system of the elements are used for the doping. The invention also relates to a semiconductor wafer which is free of dislocations and is doped with at least two electrically active dopants which belong to the same group of the periodic system of the elements.

Process for producing highly doped semiconductor wafers, and dislocation-free highly doped semiconductor wafers

A process for producing doped semiconductor wafers from silicon, which contain an electrically active dopant, such as boron, phosphorus, arsenic or antimony, optionally are additionally doped with germanium and have a defined thermal conductivity, involves producing a single crystal from silicon and processing further to form semiconductor wafers, the thermal conductivity being established by selecting a concentration of the electrically active dopant and optionally a concentration of germanium. Semiconductor wafers produced from silicon by the process have specific properties with regard to thermal conductivity and resistivity.

Process for producing doped semiconductor wafers from silicon, and the wafers produced thereby

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Mühldorf, Germany

Rupert Krautbauer