Applied Materials, Inc.

Rupankar Choudhury

Juan Carlos Rocha-Alvarez

Jay D Pinson, Ii

Zhong Qiang Hua

Hanish Kumar Panavalappil Kumarankutty

Danny D Wang

Jun Tae Choi

Job George Konnoth Joseph

Jason Michael Lamb

Amit Kumar Bansal

Jason M Schaller

Hari K Ponnekanti

Diwakar N Kedlaya

Venkata Sharat Chandra Parimi

Luke W Bonecutter

Khokan Chandra Paul

Abhijit Ashok Kangude

Badri N Ramamurthi

Fang Ruan

Gopu Krishna

Yizhen Zhang

Rajaram Narayanan

Shekhar Athani

Yunzhe Yang

Sherry L Mings

Sandeep Kumpala

Syam Sundeep Boosa

A semiconductor processing system includes a remote plasma source (RPS), a faceplate, and an output manifold positioned between the RPS and the faceplate. The output manifold is characterized by a plurality of purge outlets that are fluidly coupled with a purge gas source and a plurality of deposition outlets that are fluidly coupled with a deposition gas source. A delivery tube extends between and fluidly couples the RPS and the faceplate. The delivery tube is characterized by a generally cylindrical sidewall that defines an upper plurality of apertures that are arranged in a radial pattern. Each of the upper apertures is fluidly coupled with one of the purge outlets. The generally cylindrical sidewall defines a lower plurality of apertures that are arranged in a radial pattern and below the upper plurality of apertures. Each of the lower apertures is fluidly coupled with one of the deposition outlets.

Gas mixer to enable RPS purging

Exemplary support assemblies may include an electrostatic chuck body defining a support surface that defines a substrate seat. The assemblies may include a support stem coupled with the chuck body. The assemblies may include a heater embedded within the chuck body. The assemblies may include a first bipolar electrode embedded within the electrostatic chuck body between the heater and support surface. The assemblies may include a second bipolar electrode embedded within the chuck body between the heater and support surface. The assemblies may include at least one inner capacitive sensor embedded within the electrostatic chuck body at a position proximate a center of the substrate seat. The assemblies may include at least one outer capacitive sensor embedded within the electrostatic chuck body at a position proximate a peripheral edge of the substrate seat.

Capacitive method of detecting wafer chucking and de-chucking

Embodiments described herein relate to apparatus and techniques for mechanical isolation and thermal insulation in a process chamber. In one embodiment, an insulating layer is disposed between a dome assembly and a gas ring. The insulating layer is configured to maintain a temperature of the dome assembly and prevent thermal energy transfer from the dome assembly to the gas ring. The insulating layer provides mechanical isolation of the dome assembly from the gas ring. The insulating layer also provides thermal insulation between the dome assembly and the gas ring. The insulating layer may be fabricated from a polyimide containing material, which substantially reduces an occurrence of deformation of the insulating layer.

Dome stress isolating layer

Alignment systems employing actuators provide relative displacement between lid assemblies of process chambers and substrates, and related methods are disclosed. A process chamber includes chamber walls defining a process volume in which a substrate may be placed and the walls support a lid assembly of the process chamber. The lid assembly contains at least one of an energy source and a process gas dispenser. Moreover, an alignment system may include at least one each of a bracket, an interface member, and an actuator. By attaching the bracket to the chamber wall and securing the interface member to the lid assembly, the actuator may communicate with the bracket and the interface member to provide relative displacement between the chamber wall and the lid assembly. In this manner, the lid assembly may be positioned relative to the substrate to improve process uniformity across the substrate within the process chamber.

Alignment systems employing actuators providing relative displacement between lid assemblies of process chambers and substrates, and related methods

Embodiments described herein include integrated systems used to directly monitor a substrate temperature during a plasma enhanced deposition process and methods related thereto. In one embodiment, a substrate support assembly includes a support shaft, a substrate support disposed on the support shaft, and a substrate temperature monitoring system for measuring a temperature of a substrate to be disposed on the substrate support. The substrate temperature monitoring system includes a optical fiber tube, a light guide coupled to the optical fiber tube, and a cooling assembly disposed about a junction of the optical fiber tube and the light guide. Herein, at least a portion of the light guide is disposed in an opening extending through the support shaft and into the substrate support and the cooling assembly maintains the optical fiber tube at a temperature of less than about 100&#xb0; C. during substrate processing.

Integrated substrate temperature measurement on high temperature ceramic heater

Implementations of the present disclosure generally relate to an improved factory interface that is coupled to an on-board metrology housing configured for measuring film properties of a substrate. In one implementation, an apparatus comprises a factory interface, and a metrology housing removably coupled to the factory interface through a load port, the metrology housing comprises an on-board metrology assembly for measuring properties of a substrate to be transferred into the metrology housing.

On-board metrology (OBM) design and implication in process tool

Growing community of inventors

Karnataka, India

Rupankar Choudhury