Marvellworld Trade Ltd.

Marvell International Limited

Marvell Asia Pte., Ltd.

Runzi Chang

Winston Lee

Albert M Wu

Peter W Lee

Pantas Sutardja

Chien-Chuan Wei

Chuan-Cheng Cheng

Shiann-Ming Liou

Roawen Chen

Scott Wu

Hui Wang

Bo Wang

Min She

Chung Chyung Han

Chung Chyung (Justin) Han

Zining Wu

Huahung Kao

Lijuan Zhang

Minda Zhang

Peng Zhang

Chon In Kou

Jianhua Bi

An electronic device includes: (i) a first chiplet including a first seal ring, which is disposed in metal layers embedded between a first surface of the first chiplet, and a first substrate of the first chiplet, (ii) a second chiplet including a second seal ring, which is disposed in metal layers embedded between a second surface of the second chiplet, and a second substrate of the second chiplet, and (iii) a third seal ring, which surrounds the first and second chiplets and is disposed in a dielectric substrate extrinsic to the metal layers and overlaying the first and second surfaces of the first and second chiplets.

Double seal ring and electrical connection of multiple chiplets

Forming a metal gate transistor includes forming a semiconductor channel in a substrate, and depositing a source electrode and a drain electrode on the semiconductor channel. The source and drain electrodes are spaced apart. Dielectric spacers are provided above the source and drain electrodes to define a gate void spanning the source and drain electrodes. A dielectric layer is deposited on a bottom wall and sidewalls of the gate void. A work-function metal layer is deposited on the dielectric layer. The work-function metal layer is etched away from the sidewalls leaving the work-function metal layer on the bottom wall to control work function between the semiconductor channel and a conductive metal gate material to be deposited. The gate void above the work-function metal layer on the bottom wall, and between the dielectric layers on the sidewalls, is filled with the conductive metal gate material.

Gate stack for metal gate transistor

A semiconductor device includes a magnetic tunnel junction (MTJ) and first and second electrodes. The MTJ includes: (a) a first ferromagnetic (FM) layer, configured to have a magnetic spin in a first spin direction, and retain the first spin direction while MTJ subjected to electrical current in first and second directions, (b) a second FM layer, configured to have the magnetic spin selectively altered between the first and second spin direction, in response to altering the electrical current between the first and second directions, respectively, and (c) a stack of tunnel barrier (TB) layers, having: a first TB layer disposed over the first FM layer and having a first morphological structure, and a second TB layer, disposed between the first TB layer and the second FM layer and having a second, different, morphological structure. The first and second electrodes are electrically connected to the first and second FM layers, respectively.

Performance of magnetic channel junctions

An Integrated Circuit (IC) includes electronic circuitry, an electronic fuse (eFuse) and a protection circuit. The eFuse is configured to be selectably programmed to a logical state. The electronic circuitry is configured to read the eFuse and to operate in accordance with the logical state read from the eFuse. The eFuse has a first range of operational voltages, and the electronic circuitry has a second range of operational voltages that is broader than the first range of operational voltages. The protection circuit is configured to prevent the electronic circuitry from misreading the logical state of the eFuse due to a voltage supply to the IC falling within the second operational voltage range but outside the first operational voltage range.

Electronic fuse (eFuse) designs for enhanced chip security

An Integrated Circuit (IC) includes an electronic circuit and reliability monitoring circuitry. The electronic circuit includes multiple electronic components. The reliability monitoring circuitry is configured to assess, during operation of the IC in a host system, one or more parameters indicative of a reliability of one or more components-of-interest, selected from among the electronic components, and to provide an output indicative of the reliability.

Real-time, in-situ reliability monitoring in an integrated circuit

A method for producing a semiconductor device, the method includes, forming, on a substrate made from a semiconductor substance, at least one bipolar junction (BJ) transistor including a first terminal connected to a first well, the first well formed in the substrate and includes a first dopant having a first dopant concentration. At least one non-BJ transistor is formed on the substrate, the non-BJ transistor includes a second terminal connected to a second well, and the second well formed in the substrate and includes a second dopant having a same polarity as the first dopant. The first dopant concentration of the BJ transistor is higher than the second dopant concentration of the non-BJ transistor.

Device having bipolar junction transistors and finFET transistors on the same substrate

A CPU having a plurality of cores is configured by determining a number of cores required for operation of the CPU. Each respective core is tested, and a performance parameter of the respective core is determined based on the test. The respective core is then classified for suitability to perform a set of functions based on the performance parameter of the respective core. If at least the number of cores required for operation of the CPU are classified for suitability to perform the set of functions, a subset of suitable cores is defined, the subset including cores that are classified for the set of functions and at least the number of cores required for operation of the CPU. The required number of cores from among the subset of cores are then enabled.

Systems and methods for configuring a central processing unit having multiple cores

A semiconductor device includes a core gate and a pair of isolation gates. The core gate has a first stack of two or more layers, the first stack including at least (i) a first dielectric layer having a first thickness and (ii) a first electrode layer. The isolation gates are formed on first and second sides of the core gate. The isolation gates are configured to electrically isolate the core gate. At least one of the isolation gates has a second stack of two or more layers, the second stack including at least (i) a second dielectric layer having a second thickness greater than the first thickness and (ii) a second electrode layer.

Electrical performance and reliability of a semiconductor device comprising continuous diffusion structures

A system on a chip (SOC) device includes a substrate, processing circuitry formed on the substrate, and noise reduction circuitry formed on the processing circuitry. The noise reduction circuitry is configured to reduce noise caused by variations in current consumed by the processing circuitry. The noise reduction circuitry includes a decoupling capacitor, which includes (i) two or more first layers, (ii) one or more second layers interleaved between the first layers, (iii) dielectric layers formed between adjacent first and second layers and configured to electrically isolate between the adjacent first and second layers, (iv) a first contact, which is electrically connected to the first layers so as to form a first electrode of the decoupling capacitor, and (v) a second contact, which is electrically connected to the second layers so as to form a second electrode of the decoupling capacitor.

Decoupling capacitor integrated in system on chip (SOC) device

A device includes a semiconductor substrate having first and second surfaces facing one another, and multiple through-silicon vias (TSVs). The TSVs are formed through the substrate between the first and second surfaces, at least a first TSV of the TSVs includes: (i) an electrically conductive interconnect, which is formed within the first TSV and is configured to conduct an electrical signal between the first and second surfaces, and (ii) an attenuation layer, which is formed within the first TSV, between the substrate and the electrically conductive interconnect, the attenuation layer configured to attenuate interference between electrical signals carried by two or more of the TSVs.

Through-silicon via for high-speed interconnects

A mobile storage system receives, by a short range network interface, data from an internet of things (IoT) device. The data is stored in storage. A communication bandwidth to a cloud data storage and a power level of a power supply is determined. Based on the communication bandwidth to the cloud data storage and the power level of the power supply, the data to the cloud data storage is transferred via a long range network interface.

Mobile storage system for storing and transferring data generated by Internet of Things (IoT) devices

A method of forming an integrated circuit includes: forming a dielectric layer, a hard mask layer, a film layer and a photoresist layer; and patterning the photoresist layer to form a via mask, where the via mask is oversized, such that the via mask extends across opposing sides of a metal line mask in the hard mask layer. The method further includes: etching the film layer and the dielectric layer based on the patterned photoresist layer; ashing the photoresist layer and the film layer; etching the dielectric layer based on a pattern of the hard mask layer to provide a via region and a metal line region; etching the hard mask layer and the dielectric layer; and performing a plurality of dual damascene process operations to form a via in the via region and a metal line in the metal line region in the integrated circuit.

Creating an aligned via and metal line in an integrated circuit including forming an oversized via mask

A method of forming a finFET includes providing a semiconductor substrate having at least one fin feature extending through a diffusion layer formed on the semiconductor substrate, forming a gate layer on the diffusion layer and the fin feature, splitting the gate layer into a split gate structure including a first gate region, a second gate region, and a gap separating the first gate region and the second gate region, doping the gate layer, doping the diffusion layer to form a plurality of source/drain regions that includes a source/drain region in the gap between the first gate region and the second gate region, and injecting dopants into the diffusion layer to form a diffusion region having a plurality of pocket dopant regions. The plurality of pocket dopant regions includes at least one pocket dopant region in the gap between the first gate region and the second gate region.

Systems and methods for forming finFET analog designs having a modular memory-like layout

The present disclosure describes apparatuses and methods for temperature-based memory management. In some aspects, a temperature-based memory manager receives, from a temperature sensor of a memory block, an indication of a temperature of the memory block. The temperature-based memory manager compares the indication of the temperature with a temperature threshold associated with the memory block. Based on a result of the comparison, the temperature-based memory manager alters a frequency of a clock signal by which the memory block operates effective to change power consumption of the memory block. By so doing, power consumption of the memory block may be reduced, and operating temperatures of the memory block can be kept below temperatures that are likely to affect reliability of storage cells of the memory block. This can be effective to improve reliability and long-term performance of the memory block, particularly in high-performance or mission critical applications.

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San Jose, CA, United States of America

Runzi Chang