Semiconductor Manufacturing International (shanghai) Corporation

Semiconductor Manufacturing International (beijing) Corporation

Flexenable Limited

Ruizhi Tang

Bo Li

Fan Zhang

Lin Liu

Jialei Liu

Peng Yang

Yubin Fu

Jinyu Fu

Xiaodong Zhuang

Haojun Huang

Xinliang Feng

Xinyang Wang

Dongqing Wu

A semiconductor structure and a method for forming the semiconductor structure are provided. The method includes: providing a substrate; forming a dummy gate structure including a dummy gate dielectric layer, an initial dummy gate electrode layer, and a first sidewall spacer; forming an isolation layer having a surface lower than or coplanar with the dummy gate structure; forming a dummy gate electrode layer having a surface lower than the isolation layer, and forming a first opening to expose a portion of the first sidewall spacer; forming a modified sidewall spacer from the exposed first sidewall spacer; forming a second opening by removing the dummy gate electrode layer; forming a third opening by removing the dummy gate dielectric layer and the modified sidewall spacer, where top of the third opening has a size larger than bottom of the third opening; and forming a gate structure in the third opening.

Semiconductor structure and fabrication method thereof

The present invention relates to azaborinine derivatives their synthesis as well as their use in organic electronic devices, particularly in organic light emitting devices, organic photovoltaic devices and organic photodetectors. The invention further relates to organic electronic devices comprising the present azaborinine derivatives

Azaborinine derivatives, their synthesis and use in organic electronic devices

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Shanghai, China

Ruizhi Tang