Elenion Technologies, LLC

Nokia Solutions and Networks Oy

Coriant Advanced Technology, LLC

Ruizhi Shi

Michael J Hochberg

Thomas Wetteland Baehr-Jones

Yang Liu

Ari Jason Novack

Yangjin Ma

Matthew Streshinsky

Alexandre Horth

Kishore Padmaraju

Alexander V Rylyakov

Kishor V Desai

Daniel Jacob Blumenthal

Yi Zhang

Shuyu Yang

Nathan A Nuttall

Holger N Klein

David Henry Kinghorn

Ran Ding

Richard C Younce

Abdelrahman Ahmed

Saeed Fathololoumi

Tal Galfsky

Robert Palmer

Eu-Jin Andy Lim

Torsten Wuth-Brüning

Jean Claude Labarrie

An apparatus includes a lithium niobate (LN) layer, and a planar electro-optical modulator having at least one hybrid optical core segment formed of a portion of the LN layer and an optical guiding rib. The optical guiding rib may be located in a top silicon layer of a silicon photonics (SiP) chip, to which a thin-film LN chip is flip-chip mounted, and may be coupled to optical waveguide cores in a first silicon core layer of the SiP chip. One or more drive electrodes are disposed between a substrate of the SiP chip and the LN layer. In some embodiments hybrid optical core segments may include silicon nitride core segments and may form an MZM configured to be differentially or dual-differentially driven.

Optical hybrid-waveguide electro-optical modulator

An integrated optical device fabricated in the back end of line process located within the vertical span of the metal stack and having one or more advantages over a corresponding integrated optical device fabricated in the silicon on insulator layer.

Back end of line process integrated optical device fabrication

A photonic chip includes a device layer and a port layer, with an optical port located at the port layer. Inter-layer optical couplers are provided for coupling light between the device and port layers. The inter-layer couplers may be configured to couple signal light but block pump light or other undesired wavelength from entering the device layer, operating as an input filter. The port layer may accommodate other light pre-processing functions, such as optical power splitting, that are undesirable in the device layer.

Input waveguide arrangement in a photonic chip

A low loss high extinction ratio on-chip polarizer is disclosed. The polarizer includes an input waveguide taper having an outer waveguiding region that widens in the direction of light propagation along at least a portion of the taper length, and a core waveguiding region that narrows in the direction of light propagation along at least a portion of the taper length, so as to selectively squeeze out light of undesired modes into the outer regions while preserving light of a desired mode in the waveguide core. An output filter section is provided to prevent light from reentering the output waveguide after being squeezed out. An integrated light absorber/deflector may be coupled to the outer waveguiding regions.

Integrated on-chip polarizer

A compact, low-loss and wavelength insensitive Y-junction for submicron silicon waveguides. The design was performed using FDTD and particle swarm optimization (PSO). The device was fabricated in a 248 nm CMOS line. Measured average insertion loss is 0.28&#xb1;0.02 dB across an 8-inch wafer. The device footprint is less than 1.2 &#x3bc;m&#xd7;2 &#x3bc;m, orders of magnitude smaller than MMI and directional couplers.

Compact and low loss Y-junction for submicron silicon waveguide

When routing light on photonic integrated circuit (PIC) chips optical back-reflection and scattering can be highly detrimental to the desired application. Unused ports of optical devices, such as MMI, DC, Y-junction, PD, etc. are a cause for back-reflection and scattering, whereby the scattered light could get picked up by adjacent components, e.g. photodetectors. Management of stray light on the PIC is needed to prevent the undesired coupling between various components and to reduce noise. A dump taper may be used to guide and scatter stray light away from sensitive components or fully absorb the light while maintaining very low reflection from the taper. A doped dump taper may be used to passively absorb light reaching the unused port, thereby eliminating unwanted reflection and scattering. Alternatively, an undoped taper may be used to scatter light away from sensitive components while maintaining very low back-reflection.

Dump terminator

An optical coherent receiver includes an optical hybrid (OH) configured to mix signal and reference light, and two back-end optical ports. An optical equalizing network interconnects two 180&#xb0; OH output ports with the two back-end optical ports so that each back-end optical port receives light from each of the two OH output ports. Optical signals from each of the two back-end optical ports are converted to electrical signals that are fed to a differential amplifier. Adjusting coupling ratios and/or optical delays in the optical equalizing network reduces an OSNR penalty of a lower-bandwidth differential amplifier.

Optical domain equalization for coherent optical receivers

An optical device and a method of manufacturing an optical device, including a ridge waveguide second, and a strip-loaded ridge waveguide section, comprises applying two different protective layers and two separate etches at two different depths. The protective layers overlap to protect the same section of the optical device, and to limit the surfaces of optical device to exposure to multiple etches, except at edges where the protective layers overlap.

Waveguide etch method for multi-layer optical devices

A semiconductor-based Mach-Zehnder modulator (MZM) is configured for push-pull bias dithering to control the MZM bias at a desired set point. When two such MZM modulators are connected in parallel to form an IQ modulator, bias settings for both MZMs and the IQ bias may be controlled from an output of the IQ modulator to minimize both the IQ offset and the quadrature error of the output signal constellation even for non-ideal MZMs with low extinction ratios.

Bias control of optical modulators

Practical silicon-based light sources are still missing, despite the progress in germanium lasers, because both silicon and germanium are indirect-band semiconductors and inefficient at light generation. A tunable and single mode external cavity laser comprising: a gain medium for generating light between a reflective surface at one end of the gain medium; and a wavelength selective reflector at the other end of a laser cavity. A splitter disposed in the laser cavity includes an input port optically coupled to the gain medium, an input/output port optically coupled to the wavelength selective reflector, and an output port for outputting laser light at selected wavelengths. The wavelength selective reflector reflects light of one or more selected periodic wavelengths back to the gain medium via the input/output port, and passes light of non-selected wavelengths out of the laser cavity.

External cavity laser

A composite optical waveguide is constructed using an array of waveguide cores, in which one core is tapered to a larger dimension, so that all the cores are used as a composite input port, and the one larger core is used as an output port. In addition, transverse couplers can be fabricated in a similar fashion. The waveguide cores are preferably made of SiN. In some cases, a layer of SiN which is provided as an etch stop is used as at least one of the waveguide cores. The waveguide cores can be spaced away from a semiconductor layer so as to minimize loses.

Optical coupler comprising vertically offset waveguide cores

Two semiconductor chips are optically aligned to form a hybrid semiconductor device. Both chips have optical waveguides and alignment surface positioned at precisely-defined complementary vertical offsets from optical axes of the corresponding waveguides, so that the waveguides are vertically aligned when one of the chips is placed atop the other with their alignment surface abutting each other. The position of the at least one of the alignment surface in a layer stack of its chip is precisely defined by epitaxy. The chips are bonded at offset bonding pads with the alignment surfaces abutting in the absence of bonding material therebetween.

Optically aligned hybrid semiconductor device and method

A photonic integrated circuit for an optical transceiver includes an optical Rx circuit, an optical Tx circuit, and an integrated optical loopback circuit configured to switchably direct a loopback optical signal from an output of the optical Tx circuit to an input of the optical Rx circuit. The integrated optical loopback circuit enables in-field testing of the optical transceiver. The integrated optical loopback circuit may include an optical mixer for mixing polarization channels in dual-polarization embodiments of the optical transceiver. A phase tuner may be provided for tuning the optical phase of local oscillator light for mixing I and Q channels of the loopback optical signals in embodiments operating with quadrature modulated signals.

Optical transceiver with integrated optical loopback

A low loss high extinction ratio on-chip polarizer is disclosed. The polarizer is formed of a mode convertor followed by a mode squeezer and a dump waveguide, and may be configured to pass a desired waveguide mode and reject undesired modes. An embodiment is described that transmits a TE0 mode while blocking a TM0 mode by converting it into a higher-order TEn mode in a waveguide taper, squeezing out the TEn mode in a second waveguide taper to lessen its confinement, and then dumping the TEn mode in a waveguide bend that is configured to pass the TE0 mode.

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New York, NY, United States of America

Ruizhi Shi