Applied Materials, Inc.

Ruiyun Huang

Karthik Janakiraman

Tuan Anh Nguyen

Ganesh Balasubramanian

Amit Kumar Bansal

Rui Cheng

Kwangduk Douglas Lee

Abdul Aziz Khaja

Sarah Michelle Bobek

Sungwon Ha

Ratsamee Limdulpaiboon

Aykut Aydin

Anjana M Patel

Dong H Lee

Dong Hyung Lee

Qinghua Zhao

Exemplary methods of semiconductor processing may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include depositing a silicon-containing material on the substrate. The silicon-containing material may extend within the one or more recessed features along the substrate and a seam or void may be defined by the silicon-containing material within at least one of the one or more recessed features along the substrate. The methods may also include treating the silicon-containing material with a hydrogen-containing gas, such as plasma effluents of the hydrogen-containing gas, which may cause a size of the seam or void to be reduced.

Seam removal in high aspect ratio gap-fill

Exemplary methods of treating a chamber may include delivering a cleaning precursor to a remote plasma unit. The methods may include forming a plasma of the cleaning precursor. The methods may include delivering plasma effluents of the cleaning precursor to a processing region of a semiconductor processing chamber. The processing region may be defined by one or more chamber components. The one or more chamber components may include an oxide coating. The methods may include halting delivery of the plasma effluents. The methods may include treating the oxide coating with a hydrogen-containing material delivered to the processing region subsequent halting delivery of the plasma effluents.

Treatment for high-temperature cleans

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Santa Clara, CA, United States of America

Ruiyun Huang