Sri International

Sarnoff Corporation

Rui Zhu

Peter Alan Levine

John Robertson Tower

Robert Michael Guidash

Pradyumna Kumar Swain

Mahalingam Bhaskaran

Thomas Lee Vogelsong

Thomas Richard Senko

An imaging system for capturing light over a wide dynamic range and method for operating the same are provided. In some aspects, the method includes positioning an imaging pixel to image a scene described by light signals that extend over a wide dynamic range, and selecting a different integration time for at least two photodiodes in the imaging pixel based on light signals received by the imaging pixel, wherein the photodiodes are coupled to a sense node, and each photodiode is controlled using a different transfer gate. The method also includes performing a readout of the imaging pixel using a readout circuit connected to the sense node, wherein a capacitance associated with the sense node is modified during the readout of the at least two photodiodes.

Extended dynamic range imaging sensor and operating mode of the same

An imager has an array of pixels arranged in rows and columns, readout circuitry electrically coupled to the columns to receive signals from the pixels, the readout circuitry having at least one signal path with gain switching, and a threshold detector electrically coupled to the readout circuitry to set a gain to be applied by the readout circuitry.

Low power wide dynamic range CMOS imager output circuit having a threshold detector to set a gain to be applied by a readout circuitry

A method of operating a CMOS pixel is disclosed. The CMOS pixel includes a photodiode (PPD), a transfer gate coupled to the PPD, and an anti-blooming drain coupled to the transfer gate. A potential barrier is formed between a potential well underlying the PPD and the transfer gate. Charge is accumulated in the potential well in response to electromagnetic radiation during a first integration time. Excess charge is removed from the potential well to the anti-blooming drain that exceeds the first potential barrier. A size of the potential barrier is increased. Charge is accumulated in the potential well during a second integration time.

High dynamic range CMOS pixel and method of operating same

A pixel design is disclosed. The pixel includes a photo-sensitive element. A first reflective layer substantially overlies the photo-sensitive element. A second reflective layer substantially underlies the photo-sensitive element and forms a cavity with the first reflective layer that is non-resonant with respect to photon absorption. An aperture is formed in either the first reflective layer or the second reflective layer. When electromagnetic radiation enters the aperture, the first reflective layer and the second reflective layer are configured to reflect the electromagnetic radiation substantially toward each other until substantially absorbed in the cavity.

Night vision CMOS imager with optical pixel cavity

A non-linear conversion capability within an on-chip, per-column analog-to-digital converter (ADC) is provided to expand a compressed analog signal such that the resulting digital output that has a predetermined (linear or non-linear) mapping with respect to input brightness level of an incoming light signal to a row of pixels. The predetermined mapping may also be provided by a non-linear amplifier coupled to a linear or non-linear ADC and a resulting compressed non-linear digital representation at the output of the ADC is substantially linearized by an on-chip or an off-chip look-up table (LUT).

CMOS imager with companded column signals

A method for fabricating a back-illuminated semiconductor imaging device on an ultra-thin semiconductor-on-insulator substrate (UTSOI) is disclosed. The UTSOI substrate is formed by providing a handle wafer comprising a mechanical substrate and an insulator layer substantially overlying the mechanical substrate. A donor wafer is provided. Hydrogen is implanted in the donor wafer to form a bubble layer. The donor wafer is doped with at least one dopant to form a doped layer proximal to the bubble layer. The handle wafer and the donor wafer are bonded between the insulator layer of the handle wafer and a surface of the donor wafer proximal to the doped layer to form a combined wafer having a portion substantially underlying the bubble layer. The portion of the combined wafer substantially underlying the bubble layer is removed so as to expose a seed layer. An epitaxial layer is grown substantially overlying the seed layer, wherein at least one dopant diffuse into the epitaxial layer. At the completion of the growing of the epitaxial layer, there exists a net dopant concentration in the seed layer and the epitaxial layer which has maximum value at or near an interface between the seed layer and the insulator layer.

Growing community of inventors

East Brunswick, NJ, United States of America

Rui Zhu