Suzhou Oriental Semiconductor Co., Ltd.

China University of Mining and Technology

Sobute New Materials Co., Ltd

China Mining & Civil New Material Science and Technology Ltd.

Bote New Materials Taizhou Co., Ltd.

Zhenjiang Sobute New Material Co., Ltd.

Rui Wang

Wei Liu

Yuanlin Yuan

Lei Liu

Yi Gong

Wei Yang

Tong Liu

He Li

Ting Liu

Zhanbo Huang

Baiquan Lin

Zhendong Mao

Boquan Lin

Zheng Wang

Jiaping Liu

Hua Li

Lei Li

Xin Wang

Junwu Xia

Xiangyu Wang

Minzhi Lin

Jianbiao Bai

Shuai Yan

Yihan Wang

Qian Tian

Yang Chu

Yabin Gao

Ying Xu

Gongyuan Wang

Ningkang Meng

Wenbin Wang

Yujiang Wang

Zaizhuang Fan

Ting Yao

An IGBT device includes a p-type collector region, an n-type semiconductor layer located above the p-type collector region, a plurality of gate trenches, shielded gates, gates, and a p-type body region located in the n-type semiconductor layer and between adjacent gate trenches. The gate trenches are located in the n-type semiconductor layer. A shielded gate is located in a lower part of a gate trench. A gate is located in an upper part of the gate trench. The gate, the shielded gate, and the n-type semiconductor layer are insulated and isolated from each other.

Insulated gate bipolar transistor device

Provided is a semiconductor super junction power device which includes a super junction MOSFET cell array composed of multiple super junction MOSFET cells. A gate structure of the super junction MOSFET cell includes a gate dielectric layer, a gate and an n-type floating gate. The gate and the n-type floating gate are located above the gate dielectric layer; the gate is located on a side close to the n-type source region, and the n-type floating gate is located on a side close to the n-type drift region; the gate acts on the n-type floating gate through capacitive coupling. The n-type floating gate of at least one MOSFET cell is isolated from the p-type body region through the gate dielectric layer, and the n-type floating gate of at least one MOSFET cell contacts the p-type body region through an opening in the gate dielectric layer to form a p-n junction diode.

Semiconductor super-junction power device

Disclosed are a multifunctional cement hydration heat control material and a manufacturing method therefor. The cement hydration heat control material in is a comb polymer having three side chain structures, the three side chain structures are respectively a carboxyl group, a sugar alcohol group, and a polyether structure, and the main chain of the polymer is a carbon chain structure formed by free-radical polymerization of a double bond in a double bond compound monomer. The multifunctional cement hydration heat control material can achieve integration of cement hydration heat control performance, water reduction performance, and shrinkage reduction performance in a same molecule, can achieve control focusing on a performance by means of structural adjustment, does not need multi-component compounding during use, and is more convenient. The control material is non-toxic and water-soluble, can be made to have an appropriate concentration, and is convenient to use.

Multifunctional cement hydration heat control material and manufacturing method therefor

Provided is an insulated gate bipolar transistor (IGBT) device. The IGBT device includes p-type body regions located on a top of an n-type drift region, a first n-type emitter region located within the p-type body region; a first gate structure located over the p-type body region, where the first gate structure includes a first gate dielectric layer, a first gate and an n-type floating gate which are located above the first gate dielectric layer, where the n-type floating gate is located on a side close to the n-type drift region in a lateral direction; an insulating dielectric layer located between the n-type floating gate and the first gate; and one opening in the first gate dielectric layer. The n-type floating gate is in contact with the p-type body region to form a p-n junction diode through the one opening.

IGBT device

A manufacturing method of a semiconductor super-junction device includes the following steps: An n-type substrate is etched in a self-aligning manner using a first insulating layer and a second insulating layer as a mask to form a second groove in the n-type substrate. A gate structure is formed in the second groove.

Manufacturing method of semiconductor super-junction device

Provided is a semiconductor super junction power device. The semiconductor super junction power device includes an MOSFET cell array composed of multiple super junction MOSFET cells. Each of multiple MOSFET cells includes a p-type body region located at the top of an n-type drift region, a p-type columnar doping region located below the p-type body region, an n-type source region located in the p-type body region, a gate dielectric layer located above the p-type body region, a gate electrode located above the p-type body region, an n-type floating gate located above the p-type body region and an opening located in the gate dielectric layer, where in a lateral direction, the gate electrode is located on one side close to the n-type source region; an opening located in the gate dielectric layer, where the n-type floating gate contacts the p-type body region through the opening to form a p-n junction diode.

Disclosed is a method for manufacturing a semiconductor super-junction device. The method includes: a gate is firstly formed in a gate region of a first trench, then an n-type epitaxial layer is etched with a hard mask layer and an insulating side wall covering a side wall of the gate as masks, and a second trench is formed in the n-type epitaxial layer, and then a p-type column is formed in the first trench and the second trench.

Method for manufacturing a semiconductor super-junction device

Provided is a trench-type power transistor. The trench-type power transistor includes a source, a drain, a first gate, a second gate, a body diode and a body region contact diode. The body diode and the body region contact diode are connected in series. The first gate controls turn-on and turn-off of a first current channel through a gate voltage, the second gate is connected to the source and controls turn-on and turn-off of a second current channel through a source voltage.

Trench power transistor

Disclosed is a semiconductor power device, including a semiconductor substrate; a MOSFET region formed on the semiconductor substrate, where the MOSFET region includes at least one MOSFET unit; and at least one collector region located in the semiconductor substrate, where the collector region and the MOSFET unit form an insulated gate bipolar transistor.

Semiconductor power device

Disclosed is an insulated gate bipolar transistor (IGBT) power device, including a bipolar transistor, a first MOS transistor, a second MOS transistor, a body diode and a body region contact diode. An anode of the body region contact diode and an anode of the body diode are connected to the bipolar transistor. A first gate of the first MOS transistor is externally connected to a gate voltage of the IGBT power device and configured to control turning on and off of the first MOS transistor by means of the gate voltage of the IGBT power device. A second gate of the second MOS transistor is connected to an emitter voltage of the IGBT power device and configured to control turning on and off of the second MOS transistor by means of the emitter voltage of the IGBT power device.

IGBT power device

An apparatus for protecting a roof tray when a gob-side entry retaining end support migrates is provided. The apparatus is mounted at a top end position of a hydraulic support, and includes a movable bearing mechanism, an automatic expansion/contraction connecting groove mechanism, and an active reset mechanism. The movable bearing mechanism includes two parallel belts and a plurality of rollers supporting the belts, and the rollers are mounted on and supported by a bearing mechanism. The automatic expansion/contraction connecting groove mechanism is two concave base plates fixed between the two belts, and the two concave base plates are spaced by a distance. The active reset mechanism includes two telescopic rods and reset springs sleeved on the telescopic rods, and the telescopic rod is connected to an end portion of the reset spring to form a synchronous mechanism.

Apparatus for protecting roof tray when gob-side entry retaining end support migrates

A method for constructing networked preferential gas migration pathways and diverting and extracting gas. The method proposes that a fracture generation hole, a fracture guidance and development hole, a lateral rupture hole, and a fracture connection hole are respectively constructed in a roof in roadways on two sides of a working face in advance of an advance stress change area. Artificial guided fractures are actively constructed and formed inside the hard roof. Under a mining-induced stress effect, the artificial guided fractures and mining-induced fractures intersect with and are connected to each other to form networked preferential gas migration pathways. Meanwhile, boreholes for artificial guided fractures accelerate roof fracturing to form a rupture bed separation fracture area in a roof. Gas flows and migrates in a timely and efficient manner along networked fracture pathways and concentrates in the rupture bed separation fracture area in the roof.

Method for constructing networked preferential gas migration pathways and diverting and extracting gas

A method for stepwise construction of a preferential gas migration pathway at a stope in a coal seam. First, a gas migration pathway is preliminarily formed at a stope depending on a mining effect of mining in a first mined seam. construction and stabilization method of gob-side entry retaining in deep strata, and a method of manual-guided pre-fracturing boreholes are then used to perform active construction respectively in external space and the outside of coal-rock mass to form preferential gas migration pathways. Eventually, under the effect of mining-induced stress, a system of preferential gas migration pathways connected to each other at the stope is further formed.

Method for stepwise construction of preferential gas migration pathway at stope in coal seam

The present invention relates to a method for sorting and utilizing coal and rock for a coal and rock combined mining face, and is especially applicable to the sorting and utilization of coal and rock mined from a coal and rock combined mining face when an extremely thin coal seam is used as a protective layer in combined mining of multiple coal seams. Underground gangue transport, storage and filling systems are directly established underground to convey a large amount of coal and gangue mined from the coal and rock mining face to an underground sorting and washing chamber for efficient separation of the coal and the gangue, sorted gangue is crushed and then filled in a mined-out area of a protected layer, thus realizing the environment-friendly cut and fill mining of the protective layer while the gangue is not lifted, and effectively preventing the ground subsidence caused by combined mining of multiple coal seams; sorted middlings are conveyed to a gangue power plant on the ground for power generation through a main conveying system, so that the pressure on mine coal quality is alleviated when benefits are created in the power plant, and thus the average ash content of commercial coal is reduced, and the selling price is increased. The method provided by the invention realizes the efficient utilization of coal and rock while realizing the efficient separation of coal and gangue, and has remarkable economic and social benefits and excellent promotional value.

Method of sorting and utilizing coal and rock for coal and rock combined mining face

A method of performing coupled drilling, flushing, and slotting operations on a coal seam, which has a high gas content and prone to bursts, is described herein. The method is aimed to relieve pressure and increase permeability when drilling a through-seam borehole to pre-drain gas belts in a coal mine roadway. The pressure relief and permeation method of the present invention adjusts the water jet water inlet pressure in different stages according to the different positions of the drilling construction, and controls the water during drilling. At drilling stage, the jets are respectively subjected to low-pressure water flow drilling and medium-pressure water flow flushing. When withdraw drilling, the high-pressure water flow slotting is carried out. By doing so, the pressure is relieved in a low, medium, high stepwise manner.

Method of performing combined drilling, flushing, and cutting operations on coal seam having high gas content and prone to bursts to relieve pressure and increase permeability

Growing community of inventors

Jiangsu, China

Rui Wang