National University of Singapore

Rui-Qi Png

Lay-Lay Chua

Peter Ho

Richard Henry Friend

Perq-Jon Chia

Peter Kian-Hoon Ho

Cindy Guan-Yu Tang

Kian Ping Loh

Zhi Kuang Tan

Jie Song

Kim Kian Choo

Geok Kieng Lim

Fong Yu Kam

Loke-Yuen Wong

Bibin Thomas Anto

Mervin Chun-Yi Ang

Jing-Mei Zhuo

Kim-Kian Choo

Jie-Cong Tang

Geok-Kieng Lim

A composition comprising: an organic semiconductor comprising one or more aromatic or heteroaromatic moieties; one or more cations covalently bonded to the organic semiconductor, or to a second material; and at least one anion donor selected from the class of divalent and higher valent anions; wherein the organic semiconductor has an electron affinity between 1.5 and 4.5 eV.

N-doped electrically conductive organic materials

There is provided a material comprising a n-doped electrically conductive polymer comprising at least one electron-deficient aromatic moiety, each electron-deficient aromatic moiety having a gas-phase electron affinity (E) of 1-3 eV; and at least one counter-cation covalently bonded to the polymer or to a further polymer comprised in the material, the polymer being n-doped to a charge density of 0.1-1 electron per electron-deficient aromatic moiety, the polymer being capable of forming a layer having a vacuum workfunction (WF) of 2.5-4.5 eV, and wherein all the counter-cations comprised in the material are immobilised such that any electron in the polymer cannot significantly diffuse or migrate out of the polymer. There is also provided a method of preparing the material.

n-Doped electrically conductive polymeric material

The present invention discloses a method for transferring a thin film from a first substrate to a second substrate comprising the steps of: providing a transfer structure and a thin film provided on a surface of a first substrate, the transfer structure comprising a support layer and a film contact layer, wherein the transfer structure contacts the thin film; removing the first substrate to obtain the transfer structure with the thin film in contact with the film contact layer; contacting the transfer structure obtained with a surface of a second substrate; and removing the film contact layer, thereby transferring the thin film onto the surface of the second substrate.

Method of transferring thin film

This invention relates to a supported polymer heterostructure and methods of manufacture. The heterostructure is suitable for use in a range of applications which require semiconductor devices, including photovoltaic devices and light-emitting diodes.

Multilayer heterostructures for application in OLEDs and photovoltaic devices

A cross-linking moiety having a general formula I: Ar-W, wherein Arcomprises a fluorinated phenyl azide group having at least one non-fluorine substituent that is bulkier than fluorine at a meta position relative to the azide group, and W comprises an electron-withdrawing group.

Cross-linking moiety

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Singapore, Singapore

Rui-Qi Png