Sony Corporation

Mitsubishi Denki Kabushiki Kaisha

Sony Group Corporation

Sony Semiconductor Solutions Corporation

Rui Morimoto

Masaki Murata

Toru Udaka

Osamu Enoki

Hiroki Honda

Takuya Ito

Masanori Tsukamoto

Jun Okuno

Yusuke Shuto

Toshiyuki Kobayashi

Hiroto Sasaki

Sae Miyaji

Kazuhiko Miyahara

Ryoji Arai

Miki Sudou

Masayoshi Aonuma

[Object] To provide an ultrasonic user interface device capable of accurately obtaining movement information of a body part. [Solving Means] An ultrasonic user interface device includes a transmission unit and a reception unit. The transmission unit transmits an ultrasonic wave toward an internal tissue of an arm part or a leg part of a user. The plurality of reception units is arranged so as to surround the arm part or the leg part in a circumferential direction of the arm part or the leg part to which the ultrasonic wave is transmitted and that receives, for obtaining movement information of at least a part of the limbs of the user, at least one of an ultrasonic wave obtained when the ultrasonic wave is transmitted through the internal tissue or an ultrasonic wave obtained when the ultrasonic wave is reflected on the internal tissue.

Ultrasonic user interface device

Semiconductor devices and multiply-accumulate operation devices are disclosed. In one example, a semiconductor device includes synapses in which a nonvolatile variable resistance element taking a first resistance value and a second resistance value lower than the first resistance value and a fixed resistance element having a resistance value higher than the second resistance value are connected in series. An output line outputs a sum of currents flowing through the plurality of synapses.

Semiconductor device and multiply-accumulate operation device

A handheld instrument for endoscope surgery includes a shaft, a jaw, a handle, a phased array ultrasonic sensor, and a signal wiring. The jaw is placed at one end of the shaft and has a holding function. The handle is placed at the other end of the shaft and includes an operation mechanism for operating the jaw. The phased array ultrasonic sensor is mounted on the jaw and has an imaging function. The signal wiring is provided to the shaft and connects the ultrasonic sensor and the handle.

Handheld instrument for endoscope surgery

An organic photoelectric conversion element, an imaging device, and an optical sensor, which can detect a plurality of wavelength regions by a single element structure, are provided. The photoelectric conversion element is formed by providing an organic photoelectric conversion portion including two or more types of organic semiconductor materials having different spectral sensitivities between the first and the second electrodes. Wavelength sensitivity characteristics of the photoelectric conversion element change according to a voltage (bias voltage) applied between the first and the second electrodes. The photoelectric conversion element is mounted in the imaging device and the optical sensor.

Photoelectric conversion element, imaging device, and optical sensor

An ultrasonic array oscillator according to the present technology includes ultrasonic oscillators and semiconductor chips. The ultrasonic oscillators form an array. The semiconductor chips are bonded to the respective ultrasonic oscillators to form impedance matching circuits.

Ultrasonic array oscillator, method of producing ultrasonic array oscillator, ultrasonic probe, and ultrasonic diagnostic apparatus

An imaging system and an electronic apparatus are provided and include an image pickup device including a plurality of pixels; a variable filter provided on a light receiving face of the image pickup device, the variable filter is configured to selectively transmit incident light; wherein the image pickup device is coupled to the variable filter via an anisotropic conductive film and a connection bump.

Imaging system and electronic apparatus

Provided is a light receiving/emitting element and a light receiving/emitting apparatus that can be easily manufactured and allow high-sensitivity detection. The light receiving/emitting element is configured to include a first organic photoelectric conversion unit and a second organic photoelectric conversion unit that is disposed on the first organic photoelectric conversion unit and is different in spectral sensitivity from the first organic photoelectric conversion unit, wherein one of the first organic photoelectric conversion unit and the second organic photoelectric conversion unit acts as a light receiving unit and the other acts as a light emitting unit. The light receiving/emitting apparatus is configured to have the light receiving/emitting element mounted thereon.

Light receiving/emitting element and light receiving/emitting apparatus

Image sensors, electronic apparatuses, and methods of manufacturing an image sensor are provided. More particularly, an image sensor having a plurality of photoelectric conversion elements included in a laminated body is provided. At least one of the photoelectric conversion elements includes organic photoelectric conversion elements. In addition, at least a first surface of the laminated body includes a curved light incident surface, which further includes a concave surface. The plurality of photoelectric conversion elements receive light through the concave light incident surface. The laminated body can be connected to a support structure.

Solid-state image pickup device and electronic apparatus

A solid-state image pickup unit of the invention includes a plurality of pixels, each of which includes a photoelectric conversion element. The photoelectric conversion element includes a photoelectric conversion layer; and first and second electrodes provided with the photoelectric conversion layer in between, the photoelectric conversion layer including a first organic semiconductor of a first conductive type and a second organic semiconductor of a second conductive type, and being configured by addition of a third organic semiconductor made of a derivative or an isomer of one of the first and second organic semiconductors.

Photoelectric conversion device, solid-state image pickup unit, and electronic apparatus including ternary system of organic semiconductors

A photoelectric conversion device includes an organic photoelectric conversion film; a first electrode and a second electrode provided with the organic photoelectric conversion film in between; and a charge block layer provided between the second electrode and the organic photoelectric conversion film, in which the charge block layer includes a work function adjustment layer including a metal element on the second electrode side of the organic photoelectric conversion film, the metal element being adopted to adjust a work function, and a first diffusion suppression layer provided between the work function adjustment layer and the second electrode and suppressing diffusion of the metal element to the second electrode side.

Photoelectric conversion device, solid-state image pickup unit, and electronic apparatuses having work function adjustment layers and diffusion suppression layers

There is provided an image pickup unit capable of suppressing occurrence of false color and color mixture and acquiring a color image with high image quality. The image pickup unit includes: an image sensor including a plurality of pixels and acquiring an image pickup data; a variable filter provided on a light receiving face of the image sensor, and transmitting a selective wavelength; and a filter drive section (a wavelength selection circuit and a system control section) driving the variable filter and thereby setting its transmission wavelength. By acquiring the image pickup data while time-divisionally switching the transmission wavelength of the variable filter, pixel data corresponding to the transmission wavelength of the variable filter are acquired in a temporally-successive manner.

Image pickup unit and electronic apparatus

A semiconductor device includes: a cooling function component including an active region made of an impurity region and formed on a surface of a semiconductor layer, an N-type gate made of a semiconductor including an N-type impurity, a P-type gate made of a semiconductor including a P-type impurity, a first metal wiring connected to the N-type gate, the P-type gate and the active region, a second metal wiring connected to the P-type gate and the N-type gate, and a heat releasing portion connected to the second metal wiring for releasing heat to the outside.

Growing community of inventors

Kanagawa, Japan

Rui Morimoto