Applied Materials, Inc.

Rui Lu

Bhaskar Jyoti Bhuyan

Shruba Gangopadhyay

Michael Haverty

Xiaobo Li

Lauren Bagby

Embodiments include semiconductor processing methods to form low-κ films on semiconductor substrates are described. The processing methods may include flowing one or more deposition precursors to a semiconductor processing system. The one or more deposition precursors may include a silicon-containing precursor that may be a cyclic compound. The methods may include generating a deposition plasma from the one or more deposition precursors. The methods may include depositing a silicon-and-carbon-containing material on the substrate from plasma effluents of the deposition plasma. The silicon-and-carbon-containing material as-deposited may be characterized by a dielectric constant less than or about 3.0.

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Santa Clara, CA, United States of America

Rui Lu